Compositional control in molecular beam epitaxy growth of GaNyAs1−y on GaAs (001) using an Ar/N2 RF plasma

GaNAs/GaAs multiple quantum well grown by modulated N radical beam sequence of RF-MBE: Effect of growth interruption

“…The former are GaAs layers and the latter are GaNAs well layers, respectively. The similar periodical image has been reported in a few literatures concerning with GaNAs/GaAs MQW growth by MBE [15]. These GaNAs layers show planer-like morphology indicating that MQW structure was successfully fabricated in this study.…”

Role of Sb in the growth and optical properties of 1.55μm GaInN(Sb)As∕GaNAs quantum-well structures by molecular-beam epitaxy

“…Active N was provided by a radio frequency plasma source using N 2 / Ar dynamic gas switching. 16 The basic double-QW ͑DQW͒ structure consists of 7 nm Ga 0.6 In 0.4 N y As 1−y−z Sb z QWs and 20 nm GaN 0.045 As 0.955 barriers, where the nominal N content y is ϳ2.7%. In this study, we focus on three samples with Sb flux of 0 ͑sample V255͒, 0.012 mL/ s ͑sample V259͒ and 0.028 mL/ s ͑sample V260͒, respectively.…”

MBE growth of InAs self-assembled quantum dots embedded in GaNAs strain-compensating layers

“…Here we should also consider the effect of both the interdiffusion at the interface and the segregation of nitrogen leading to a high quantity of nitrogen being accumulated toward the surface [10]. However, we think these effects are much smaller than the effect of local and net average strain, and the interdiffusion should be minimal because no growth interruption was employed during the growth of QDs and embedding layers.…”