Compositional dependence of the nonlinear refractive index of new germanium-based chalcogenide glasses

Petit, Laëticia; Carlie, Nathan; Chen, H.; Gaylord, Scott W.; Massera, Jonathan; Boudebs, Georges; Hu, Jie; Agarwal, Anu; Kimerling, Lionel C.; Richardson, Kathleen

doi:10.1016/j.jssc.2009.07.027

Cited by 82 publications

(53 citation statements)

References 33 publications

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“…The values of n 2 presented in this work are in good agreement with data measured by Petit et al at 1.064 µm for Ge 28 Sb 7 Se 65 glass using a similar picosecond laser source [26]. Concerning the determination of two photon absorption coefficient at 1.064 µm, it is globally growing in studied (GeSe 2 ) 100-x (Sb 2 Se 3 ) x glasses with increasing content of antimony which is in accordance with the shift of the bandgap to lower energies.…”

Section: Nonlinear Optical Propertiessupporting

confidence: 92%

“…5, intensity ratio of edge-shared to corner-shared entities increases with x. Decrease of GeSe 2 component concentration in the glassy network thus tends to favor presence of edge-shared [GeSe 4/2 ] tetrahedra and to reduce the number of corner-shared [GeSe 4/2 ] tetrahedra within the network, in agreement with Petit's study [26]. Glasses rich in Sb 2 Se 3 thus contain a large number of Ge 2 Se 8/2 entities.…”

Section: Structure Of (Gese 2 ) 100-x (Sb 2 Se 3 ) X Glassessupporting

confidence: 88%

“…The two main effects of Ge/Sb increase in discussed over-stoichiometric glass set is the increase of [GeSe 4/2 ] tetrahedra number connected by edges compare to those connected by corners and the decrease of number of Se-Se bonds. It was also shown that n 2 value is related to the number of heteropolar bonds within the glassy matrix and is more influenced by the increase of Sb-Se bonds number than by the increase of Ge-Se ones [26].…”

Section: Structure Of (Gese 2 ) 100-x (Sb 2 Se 3 ) X Glassesmentioning

confidence: 99%

“…Finally, presence of antimony in amorphous chalcogenides is known to reduce photosensitivity of the material. Only few compositions were investigated in the Ge-Sb-Se system, Ge 28 Sb 12 Se 60 (commercially known as AMTIR-3 or IG5, E g~1 .8 eV) with n 2 = 9.4⋅10 −18 m 2 /W at 1.5 m or some Se over-stoichiometric glasses for which the Ge/Sb varies from 1.1 to 5 measured at 1.064 m [5,26]. The tailoring of the glass chemical composition in Ge-Sb-Se system would lead to the optimization of FOM thanks to stronger increasing of n 2 comparing with TPA.…”

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confidence: 99%

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Structure, nonlinear properties, and photosensitivity of (GeSe_2)_100-x(Sb_2Se_3)_x glasses

Olivier¹,

Tchahame²,

Němec³

et al. 2014

Opt. Mater. Express

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Chalcogenide glasses from (GeSe 2 ) 100-x (Sb 2 Se 3 ) x system were synthesized, with x varying from 5 to 70, in order to evaluate the influence of antimony selenide addition on nonlinear optical properties and photosensitivity. Nonlinear refractive index and two photon absorption coefficients were measured both at 1064 nm in picosecond regime using the Z-scan technique and at 1.55 µm in femtosecond regime using an original method based on direct analysis of beam profile change while propagating in the chalcogenide glasses. The study of their photosensitivity at 1.55 m revealed highly glass composition dependent behavior and quasi-photostable compositions have been identified in femtosecond regime. To better understand these characteristics, the evolution of the glass transition temperature, density and structure with the chemical composition were determined.

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Section: Nonlinear Optical Propertiessupporting

confidence: 92%

Section: Structure Of (Gese 2 ) 100-x (Sb 2 Se 3 ) X Glassessupporting

confidence: 88%

Section: Structure Of (Gese 2 ) 100-x (Sb 2 Se 3 ) X Glassesmentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Structure, nonlinear properties, and photosensitivity of (GeSe_2)_100-x(Sb_2Se_3)_x glasses

Olivier¹,

Tchahame²,

Němec³

et al. 2014

Opt. Mater. Express

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“…Specifically, we will consider Ge23Sb7Se70 which has a high index (n = 2.6 at 2.5 µm), is transparent between 1 and 15 µm wavelengths, and has a low thermal conductivity of 0.22 W/mK 38 . In the following, we only consider the effects of index change, such that 1 eff g dn a n dT  .…”

Section: Chip-scale Optical Cavity-enhanced Photothermal Spectroscopymentioning

confidence: 99%

On-chip infrared sensors: redefining the benefits of scaling

et al. 2017

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Infrared (IR) spectroscopy is widely recognized as a gold standard technique for chemical and biological analysis.Traditional IR spectroscopy relies on fragile bench-top instruments located in dedicated laboratory settings, and is thus not suitable for emerging field-deployed applications such as in-line industrial process control, environmental monitoring, and point-of-care diagnosis. Recent strides in photonic integration technologies provide a promising route towards enabling miniaturized, rugged platforms for IR spectroscopic analysis. It is therefore attempting to simply replace the bulky discrete optical elements used in conventional IR spectroscopy with their on-chip counterparts. This size down-scaling approach, however, cripples the system performance as both the sensitivity of spectroscopic sensors and spectral resolution of spectrometers scale with optical path length. In light of this challenge, we will discuss two novel photonic device designs uniquely capable of reaping performance benefits from microphotonic scaling. We leverage strong optical and thermal confinement in judiciously designed micro-cavities to circumvent the thermal diffusion and optical diffraction limits in conventional photothermal sensors and achieve a record 104 photothermal sensitivity enhancement. In the second example, an on-chip spectrometer design with the Fellgett's advantage is analyzed. The design enables sub-nm spectral resolution on a millimeter-sized, fully packaged chip without moving parts.

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Phase Transformation and Switching Behavior of Magnetron Plasma Sputtered Ge₂Sb₂Se₄Te

Vitale

Miller

Robinson

et al. 2022

Advanced Photonics Research

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Stand-alone memory chips incorporating chalcogenide phase change materials (PCMs) such as Ge 2 Sb 2 Te 5 (GST) have been available commercially for several years. These devices exploit the resistivity difference between the amorphous and crystalline phases to encode data. Operation is robust and reliable, in part because switching the phase of a very small volume of PCM material, less than 0.001 μm 3 , leads to a very large change in device resistance. [1] Recently, researchers have explored the use of PCMs incorporated into photonic devices to create reconfigurable nonvolatile elements for applications such as o ptical switching, [2] erasable photonics, [3] tunable filters, [4] active metasurfaces, [5] and neuromorphic computing. [6] PCM-enabled nonvolatile photonic devices have been demonstrated in which the PCM is deposited on one or more segments of a ring resonator, [7] Mach-Zender interferometer, [8] or waveguide directional coupler. [9] A difference in optical path length is generated by setting the PCM into an amorphous (low index) or crystalline (high index) state, and light is thereby directed to one or the other output port. The state of the PCM is set using a resistive heater element: a short, high-temperature pulse amorphizes the PCM,

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Compositional dependence of the nonlinear refractive index of new germanium-based chalcogenide glasses

Cited by 82 publications

References 33 publications

Structure, nonlinear properties, and photosensitivity of (GeSe_2)_100-x(Sb_2Se_3)_x glasses

Structure, nonlinear properties, and photosensitivity of (GeSe_2)_100-x(Sb_2Se_3)_x glasses

On-chip infrared sensors: redefining the benefits of scaling

Phase Transformation and Switching Behavior of Magnetron Plasma Sputtered Ge₂Sb₂Se₄Te

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Compositional dependence of the nonlinear refractive index of new germanium-based chalcogenide glasses

Cited by 82 publications

References 33 publications

Structure, nonlinear properties, and photosensitivity of (GeSe_2)_100-x(Sb_2Se_3)_x glasses

Structure, nonlinear properties, and photosensitivity of (GeSe_2)_100-x(Sb_2Se_3)_x glasses

On-chip infrared sensors: redefining the benefits of scaling

Phase Transformation and Switching Behavior of Magnetron Plasma Sputtered Ge2Sb2Se4Te

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Phase Transformation and Switching Behavior of Magnetron Plasma Sputtered Ge₂Sb₂Se₄Te