Compositional disparity in Cu2ZnSnS4 (CZTS) thin film deposited by RF-sputtering from a single quaternary compound target

Ferdaous, Mohammad Tanvirul; Chelvanathan, Puvaneswaran; Shahahmadi, Seyed Ahmad; Sapeli, M. M.I.; Sopian, Kamaruzzaman; Amin, Nowshad

doi:10.1016/j.matlet.2018.03.098

Cited by 29 publications

(12 citation statements)

References 14 publications

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“…Owing to its remarkable properties such as earth-abundant and non-toxic elements, optimal optical bandgap (1.0–1.5 eV), excellent absorption coefficients (>10 4 cm −1 ) [ 1 , 2 ], and desirable electrical properties, the CZTS has become an ideal absorber for thin-film-based photovoltaic applications. Currently, various fabrication techniques are being used to deposit kesterite thin films, including atom beam sputtering [ 3 ], hybrid sputtering [ 4 ], radiofrequency magnetron sputtering [ 5 ], co-evaporation [ 6 ], electron-beam-evaporated [ 7 ], electrodeposition [ 8 ], sol-gel [ 9 ], spray pyrolysis [ 10 ], and molecular ink techniques [ 11 ]. These processes involve either costly vacuum equipment or toxic, hazardous, and explosive solvents.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Cu2ZnSnS4 Light Absorber Using a Cost-Effective Mechanochemical Method for Photovoltaic Applications

et al. 2022

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In the present study, we adopt an easy and cost-effective route for preparing Cu2ZnSnS4 (CZTS)-absorber nanoparticles by a mechanochemical method using non-toxic and environmentally benign solvents (butanol, methyl ethyl ketone, and ethanol). The gram-scale synthesis of absorber nanoparticles was achieved in a non-hazardous, zero-waste process without using high-vacuum equipment. The effects of annealing and Na incorporation on the properties of spin-coated CZTS thin films were scrutinized. The deposited samples showed kesterite crystal structure and single phase. The morphological results revealed an improvement in the surface morphology after annealing. The optical bandgaps of the thin films lied in the range of 1.50–1.57 eV with p-type nature. Finally, photovoltaic devices were fabricated, and their cell performance parameters were studied. An efficiency of 0.16% was observed. The present study provides a potential route for the cost-effective fabrication of CZTS-based photovoltaic devices.

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Section: Introductionmentioning

confidence: 99%

Fabrication of Cu2ZnSnS4 Light Absorber Using a Cost-Effective Mechanochemical Method for Photovoltaic Applications

et al. 2022

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“…Figure 1 shows the X-ray diffraction (XRD) pattern of the synthesized CZNS, WO 3 , and G-CZNS@W. The three dominant peaks (112), (220), and (312) are attributed to the CZNS kesterite phase, indexed based on the standard JCPDS data (JCPDS card No. 26-0575) 27 . For the WO 3 nanorod, it was evident that all the sharp diffraction peaks could be classified as the monoclinic phase of WO 3 , and the results matched well with the standard JCPDS data (card No.…”

Section: Resultsmentioning

confidence: 99%

Hybrid of Graphene based on quaternary Cu2ZnNiSe4 –WO3 Nanorods for Counter Electrode in Dye-sensitized Solar Cell Application

Cho

Jung

et al. 2020

Sci Rep

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A novel nanohybrid of graphene-based Cu 2 ZnniSe 4 with WO 3 nanorods (G-CZNS@W) was successfully synthesized via a simple hydrothermal method to use as a counter electrode (ce) for dye-sensitized solar cells (DSSCs). The characterization technique confirmed the structural and morphologies of the G-CZNS@W nanohybrid, which could show rapid electrons transfer pathway through the WO 3 nanorods. Moreover, the as-fabricated G-CZNS@W nanohybrid exhibited synergetic effect between G-cZnS and a Wo 3 nanorod, which could affect the electrocatalytic activity towards triiodide reaction. The nanohybrid exhibits an excellent photovoltaic performance of 12.16%, which is higher than that of the standard pt electrode under the same conditions. the G-cZnS@W nanohybrid material as ce thus offers a promising low-cost Pt-free counter electrode for DSSC. Extracting energy from fossil fuels is the major cause of environmental pollution. Solar energy, a source of renewable energy, could be considered as an alternative source of energy. Dye-sensitized solar cells (DSSCs) are the most promising renewable energy devices, as was reported by Michael Grätzel in 1991 1. These DSSCs devices have been introduced into the market to convert the renewable incident solar radiation into electricity with high power conversion efficiency, low-cost fabrication, and in an environmentally benign manner 2. Generally, DSSCs consist of (1) the working electrode, which is coated by a thin, mesoporous layer of a semiconductor, usually TiO 2 , on whose surface a monolayer of dye molecules is adsorbed; and (2) the counter electrode, which is coated with a thin catalyzer layer, usually Pt electrode. The space between the two electrodes is filled with an electrolyte containing a redox couple (often I − /I 3 −) 3,4. Major research efforts have been undertaken to find alternatives to the traditional Pt CE. Because of its high cost and low resources, a better alternative to Pt is required for commercial applications. Some of the counter electrodes with high efficiency reported so far have included carbonaceous materials, such as carbon 5 , graphene 6 , and N-doped carbon 7 ; polymers, such as Polyaniline nanotube 8 , PEDOT:PSS/halloysite 9 , and poly α-naphtylamine 10 ; metal sulphides, such as PbS 11 , FeS 2 12 , and CoS 2 13 ; metal oxides, such as CoFe 2 O4 14 , MnO 2 15 , and WO 3 16 ; and quaternary material, such as Cu 2 ZnSnS 4 17

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“…where q, ε 1 , ε 2 , V bi , V, N A , and N D are the electric charge of an electron, dielectric permittivity of CdS, dielectric permittivity of p-absorber, built-in voltage, applied voltage, acceptor concentration in the p-absorber layer and donor concentration in a CdS buffer layer, respectively. However, a higher J sc value for CBO > 0.3 eV was recorded for CdS of Set D (Figure 5b) despite the reduced depletion width, which was supposed to decrease the photogenerated current according to Equation (8). This could be due to beneficial synergistic effects of high carrier mobility and a narrower depletion region, which enables carriers to overcome a high CBO barrier.…”

Section: ƞ =mentioning

confidence: 91%

“…However, the scarcity of indium (In) and tellurium (Te) is predicted to hamper the future adoption of CIGS and CdTe at a multi-terawatt level scale [5,6]. Therefore, various earth-abundant, low cost and pure sulfide-based materials such as Cu 2 ZnSnS 4 (CZTS), Cu 2 SnS 3 (CTS), FeS 2 and SnS are being rigorously experimented with as for plausible next generation thin film technologies [7][8][9][10][11][12][13][14]. These aforementioned photo-absorber materials are often adopted in the well-established Mo/absorber/CdS/ZnO substrate type device configuration that was developed by ARCO back in 1988, which was one of the key innovations that catalyzed the development of high efficiency CIGS solar cells [15].…”

Section: Introductionmentioning

confidence: 99%

Numerical Insights into the Influence of Electrical Properties of n-CdS Buffer Layer on the Performance of SLG/Mo/p-Absorber/n-CdS/n-ZnO/Ag Configured Thin Film Photovoltaic Devices

et al. 2021

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A CdS thin film buffer layer has been widely used as conventional n-type heterojunction partner both in established and emerging thin film photovoltaic devices. In this study, we perform numerical simulation to elucidate the influence of electrical properties of the CdS buffer layer, essentially in terms of carrier mobility and carrier concentration on the performance of SLG/Mo/p-Absorber/n-CdS/n-ZnO/Ag configured thin film photovoltaic devices, by using the Solar Cell Capacitance Simulator (SCAPS-1D). A wide range of p-type absorber layers with a band gap from 0.9 to 1.7 eV and electron affinity from 3.7 to 4.7 eV have been considered in this simulation study. For an ideal absorber layer (no defect), the carrier mobility and carrier concentration of CdS buffer layer do not significantly alter the maximum attainable efficiency. Generally, it was revealed that for an absorber layer with a conduction band offset (CBO) that is more than 0.3 eV, Jsc is strongly dependent on the carrier mobility and carrier concentration of the CdS buffer layer, whereas Voc is predominantly dependent on the back contact barrier height. However, as the bulk defect density of the absorber layer is increased from 1014 to 1018 cm−3, a CdS buffer layer with higher carrier mobility and carrier concentration is an imperative requirement to a yield device with higher conversion efficiency and a larger band gap-CBO window for realization of a functional device. Most tellingly, simulation outcomes from this study reveal that electrical properties of the CdS buffer layer play a decisive role in determining the progress of emerging p-type photo-absorber layer materials, particularly during the embryonic device development stage.

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Compositional disparity in Cu2ZnSnS4 (CZTS) thin film deposited by RF-sputtering from a single quaternary compound target

Cited by 29 publications

References 14 publications

Fabrication of Cu2ZnSnS4 Light Absorber Using a Cost-Effective Mechanochemical Method for Photovoltaic Applications

Fabrication of Cu2ZnSnS4 Light Absorber Using a Cost-Effective Mechanochemical Method for Photovoltaic Applications

Hybrid of Graphene based on quaternary Cu2ZnNiSe4 –WO3 Nanorods for Counter Electrode in Dye-sensitized Solar Cell Application

Numerical Insights into the Influence of Electrical Properties of n-CdS Buffer Layer on the Performance of SLG/Mo/p-Absorber/n-CdS/n-ZnO/Ag Configured Thin Film Photovoltaic Devices

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