Compositional evolution of Bi-induced acceptor states in GaAs<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>Bi<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>alloy

Pettinari, G.; Engelkamp, Hans; Christianen, P.C.M.; Maan, J. C.; Polimeni, A.; Capizzi, M.; Lu, X.; Tiedje, T.

doi:10.1103/physrevb.83.201201

Cited by 33 publications

(31 citation statements)

References 34 publications

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“…7, Bi-induced perturbations in the physical constants of the semiconductor must be con-sidered. Though the optical constants of GaAsBi are not well known, there are good estimates for changes in complex dielectric function and absorption coefficient [29,30]; the band bending may be estimated assuming Fermi pinning at the Bi-induced acceptor states [11]. However, including these factors increases the spectroscopic estimation of p by only a factor of 2 to 4, rather than orders of magnitude.…”

Section: Resultsmentioning

confidence: 99%

“…These attractive properties are mainly related to the large disparity in atomic size and electronegativity between Bi and As, and to the relativistic corrections induced by the bismuth. Recently, Nargelas et al [10] showed alloying nominally undoped GaAs with group V Bi counterintuitively introduces p-type carriers: holes thermally excited from Bi-induced acceptor levels lying 26.8 meV above the valence band edge [11]. Pettinari et al [12] revealed -through electrical transport measurements -that the hole concentration rises with x up to p = 2.4 × 10 17 cm −3 at x = 10.6%.…”

Section: Introductionmentioning

confidence: 99%

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Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration

Steele¹,

Lewis²,

Henini³

et al. 2014

Opt. Express

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Abstract:We report room-temperature Raman scattering studies of nominally undoped (100) GaAs 1−x Bi x epitaxial layers exhibiting Biinduced (p-type) longitudinal-optical-plasmon-coupled (LOPC) modes for 0.018 ≤ x ≤ 0.048. Redshifts in the GaAs-like optical modes due to alloying are evaluated and are paralleled by strong damping of the LOPC. The relative integrated Raman intensities of LO(Γ) and LOPC A LO /A LOPC are characteristic of heavily doped p-GaAs, with a remarkable near total screening of the LO(Γ) phonon (A LO /A LOPC → 0) for larger Bi concentrations. A method of spectral analysis is set out which yields estimates of hole concentrations in excess of 5 × 10 17 cm −3 and correlates with the Bi molar fraction. These findings are in general agreement with recent electrical transport measurements performed on the alloy, and while the absolute size of the hole concentrations differ, likely origins for the discrepancy are discussed. We conclude that the damped LO-phonon-hole-plasmon coupling phenomena plays a dominant role in Raman scattering from unpassivated nominally undoped GaAsBi.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration

Steele¹,

Lewis²,

Henini³

et al. 2014

Opt. Express

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“…The lifetime broadened line width is 0.008 meV (refs 30,31). The signal dependence on magnetic flux density B was determined with a 33 T (0.33 MG) water-cooled Bitter magnet, with the field axis, the light propagation direction and the normal to the sample plane all parallel, that is, the Faraday geometry 23 . For polarized experiments, a wire grid polarizer and an x-cut quartz quarter wave plate were mounted with optical axes at 45°to each other directly on top of the sample.…”

Section: Methodsmentioning

confidence: 99%

“…Given the above questions, and the renewed interest in the high-field regime, it is crucial to validate experimentally the theory for the absorption spectra on which the inferred fields are based. Doing so directly for hydrogen is impractical because the required fields are two to three orders of magnitude beyond what is currently available in any laboratory 22,23 . Such tests become even more essential where atomic species beyond hydrogen are being considered, for example, helium [10][11][12] or molecular hydrogen [24][25][26][27] as for these cases the multiple particle calculations required are complex and involve approximations (for example, basis-state choices and sizes) that are not a priori guaranteed.…”

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confidence: 99%

Si:P as a laboratory analogue for hydrogen on high magnetic field white dwarf stars

Murdin

Pang

et al. 2013

Nat Commun

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Laboratory spectroscopy of atomic hydrogen in a magnetic flux density of 10 5 T (1 gigagauss), the maximum observed on high-field magnetic white dwarfs, is impossible because practically available fields are about a thousand times less. In this regime, the cyclotron and binding energies become equal. Here we demonstrate Lyman series spectra for phosphorus impurities in silicon up to the equivalent field, which is scaled to 32.8 T by the effective mass and dielectric constant. The spectra reproduce the high-field theory for free hydrogen, with quadratic Zeeman splitting and strong mixing of spherical harmonics. They show the way for experiments on He and H 2 analogues, and for investigation of He 2 , a bound molecule predicted under extreme field conditions.

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“…[3][4][5] In general, incorporating Bi is very challenging due to the large differences in the Group V atomic radii (Bi is 31% larger than As) and electronegativities (Bi is 9% smaller than As). 3,6 Recent studies indicate that Bi forms acceptor levels 7 introducing holes in nominally undoped GaAs 1−y Bi y . 8 Herein we report on two GaAs 1−y Bi y Raman signatures which can be used to determine the Bi composition (y) and predict 300K photoluminescence intensity.…”

mentioning

confidence: 99%

GaAs1−yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1−yBiy and Bi incorporation

Forghani

Guan

et al. 2015

AIP Advances

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We report the use of two Raman signatures, the Bi-induced longitudinal-optical-plasmon-coupled (LOPC) mode and the GaAs Fröhlich scattering intensity, present in nominally undoped (100) GaAs1−yBiy to predict the 300K photoluminescence intensity and Bi composition (y) in GaAs1−yBiy. The LOPC mode is used to calculate the hole concentration in GaAs1−yBiy epitaxial layers. A linear relationship between hole concentration and photoluminescence intensity is found for a range of samples grown at various temperatures and growth rates. In addition, the composition (y) of Bi in GaAs1−yBiy is also found to be linearly related to the GaAs Fröhlich scattering intensity.

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Compositional evolution of Bi-induced acceptor states in GaAs1−xBixalloy

Cited by 33 publications

References 34 publications

Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration

Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration

Si:P as a laboratory analogue for hydrogen on high magnetic field white dwarf stars

GaAs1−yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1−yBiy and Bi incorporation

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