COMPOSITIONAL MICROSTRUCTURES WITHIN Co-Cr FILM GRAINS

Maeda, Yasushi; Takahashi, Masaya

doi:10.3379/jmsjmag.13.s1_673

“…4b. These fine stripes, as they will be referred to hereafter, start to develo perpendicularly to the column boundaries (white stripe8 The inter-stripe distance of those fine stripes ( 1 4 nmj is smaller than those observed for sputtered CoCr [3]. In the sample shown in figs.…”

Section: Resultsmentioning

confidence: 89%

Microstructure of coevaporated CoCr films with perpendicular anisotropy

Kranenburg

¹

,

Lodder

²

,

Maeda

³

et al. 1990

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-CO-evaporation of CO and Cr is applied to achieve good magnetic characteristics of the media deposited at low temperature, The opposed oblique incidence vapour flux induces a columnar alignment parallel to the evaporation plane. Further a process-induced segregation is present which introduces separated CO-rich and Cr-rich regions. A selective etching process is carried out to find proof of this. The large increase of M, with respect to those of a homogeneous bulk CoCr layer with the same average composition confirms this. The columns, texture axes and K axes are inclined towards the CO source, which was the main vapour flux direction. With increasing process temperature the tilting decreases. INTRODUCTIONIn deposited CoCr films relatively high substrate temperatures are necessary to achieve suitable magnetic properties.Therefore we started experiments with co-evaporation [1,2] in where two vapour beams arrive from opposite directions. Shadowing effects during deposition play a major role in the film growth. The process geometry induces separated regions of the two materials that are used; in our case CO and Cr. This so-called process-induced segregation enables us to deposit CoCr layers which have already enhanced perpendicular characteristics at low substrate temperature.

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“…4a). Also CP-like stripes [3] (representing CO-rich areas) are introduced, see the enlargement in fig. 4b.…”

Section: Resultsmentioning

confidence: 99%

Microstructure of Co-evaporated CoCr films with perpendicular anisotropy

Kranenburg¹,

Lodder²

1990

International Conference on Magnetics

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-CO-evaporation of CO and Cr is applied to achieve good magnetic characteristics of the media deposited at low temperature, The opposed oblique incidence vapour flux induces a columnar alignment parallel to the evaporation plane. Further a process-induced segregation is present which introduces separated CO-rich and Cr-rich regions. A selective etching process is carried out to find proof of this. The large increase of M, with respect to those of a homogeneous bulk CoCr layer with the same average composition confirms this. The columns, texture axes and K axes are inclined towards the CO source, which was the main vapour flux direction. With increasing process temperature the tilting decreases. INTRODUCTIONIn deposited CoCr films relatively high substrate temperatures are necessary to achieve suitable magnetic properties.Therefore we started experiments with co-evaporation [1,2] in where two vapour beams arrive from opposite directions. Shadowing effects during deposition play a major role in the film growth. The process geometry induces separated regions of the two materials that are used; in our case CO and Cr. This so-called process-induced segregation enables us to deposit CoCr layers which have already enhanced perpendicular characteristics at low substrate temperature.

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“…-300 -400 Figure 2 shows the dependence of the deposition rate Rd on Vb [3,7] In the OTS system, Rd was constant over the Vb range from 0 to -75 v, then almost linearly decreased to Vb below -75 v, while in the RFMS system, Rd decreased lower than -300 v for Vb.…”

Section: Methodsmentioning

confidence: 99%

“…Especially, negatively ionized clusters can be blocked to reach the deposition surface of the substrate under application of substrate bias voltage. Figure 4 shows how ~e50 of Co-Cr films by RF sputtering and the OTS depends on the film thickness 0 [7]. The columnar structure is reported to be essential for the improvement of ~e50 in case of RF (DC) MS, while microstructures in the Co-Cr films have been observed to be densely and homogeneously packed particles through the Co-Cr Figure 5 shows typical SEM images of Co-Cr thin films prepared by the OTS [7].…”

Section: Characteristics On Sputterinand Process In the Rf (Dc)mentioning

confidence: 99%

CONTROL OF CRYSTALLINITY AND MICROSTRUCTURE OF Co-Cr FILMS BY CLUSTER FORMATION IN AN OPPOSING TARGET SPUTTERING

Kadokura

¹

,

Naoe

²

1991

J. Magn. Soc. Jpn.

0

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The opposing target sputtering (OTS) is characterized to be a unique method for microcluster fonnation of any high melting-point materials. This method was applied to form Co-cr films for discussing thin film formation process compared with RF magnetron sputtering and DC magnetron sputtering. Co-Cr film fonnation with the OTS is characterized on the following properties for high density magnetic recording media. Densely packed microstructures of small-sized particles are typically observed to be in the Co-Cr thin films prepared by the OTS. High c-axis crystallite orientation of h.c.p. structure can be obtained from less than 20 nm-thick Co-cr films by the OTS. More than 1000 oe of perpendicular coercivity was obtained at lower substrate temperature than 150°C. It is thought that the effects of cluster formation and reduced energy loss of sputtered-atoms in the OTS process take out the above properties on the Co-Cr films.

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COMPOSITIONAL MICROSTRUCTURES WITHIN Co-Cr FILM GRAINS

Cited by 6 publications

References 24 publications

Microstructure of coevaporated CoCr films with perpendicular anisotropy

Microstructure of coevaporated CoCr films with perpendicular anisotropy

Microstructure of Co-evaporated CoCr films with perpendicular anisotropy

CONTROL OF CRYSTALLINITY AND MICROSTRUCTURE OF Co-Cr FILMS BY CLUSTER FORMATION IN AN OPPOSING TARGET SPUTTERING

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