Compositionally-graded InGaAs–InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

Yang, Li; Bulsara, Mayank T.; Lee, Kenneth E.; Fitzgerald, Eugene A.

doi:10.1016/j.jcrysgro.2011.04.032

Cited by 35 publications

(23 citation statements)

References 17 publications

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“…A relationship between the threading dislocation density, strain rate, and dislocation glide velocity has been previously reported by Fitzgerald et al and Yang et al 2,3,9,10 Their theory predicts the number of threading dislocations which must be nucleated in a graded buffer for a constant growth rate, strain gradient, and glide velocity. Since the growth rate and strain gradient are both experimental parameters, a proportionality between the dislocation density and glide velocity is given by…”

Section: B Analysismentioning

confidence: 66%

“…[1][2][3][4] In the past decade, research on InAs x P 1Àx graded buffers has provided for the development of thermophotovoltaics, infrared photodetectors, and high-speed electronics on InP. [5][6][7] These applications rely on the low band gap and high electron mobility of In y Ga 1Ày As alloys latticed matched to various compositions of InAs x P 1Àx .…”

Section: Introductionmentioning

confidence: 99%

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Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates

Jandl¹,

Bulsara²,

Fitzgerald

2014

Journal of Applied Physics

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The properties of InAsxP1−x compositionally graded buffers grown by metal organic chemical vapor deposition are investigated. We report the effects of strain gradient (ε/thickness), growth temperature, and strain initiation sequence (gradual or abrupt strain introduction) on threading dislocation density, surface roughness, epi-layer relaxation, and tilt. We find that gradual introduction of strain causes increased dislocation densities (>106/cm2) and tilt of the epi-layer (>0.1°). A method of abrupt strain initiation is proposed which can result in dislocation densities as low as 1.01 × 105 cm−2 for films graded from the InP lattice constant to InAs0.15P0.85. A model for a two-energy level dislocation nucleation system is proposed based on our results.

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Section: B Analysismentioning

confidence: 66%

Section: Introductionmentioning

confidence: 99%

Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates

Jandl¹,

Bulsara²,

Fitzgerald

2014

Journal of Applied Physics

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“…Their behaviour is of fundamental importance for the performance of thermoelectric devices 2 , nano-electronics 3,4 and solar cells 5,6 . In structural engineering alloys, used for high-performance aerospace applications, dislocation-mediated slip is one of the main deformation mechanisms 7 .…”

mentioning

confidence: 99%

X-ray micro-beam characterization of lattice rotations and distortions due to an individual dislocation

et al. 2013

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Understanding and controlling the behaviour of dislocations is crucial for a wide range of applications, from nano-electronics and solar cells to structural engineering alloys. Quantitative X-ray diffraction measurements of the strain fields due to individual dislocations, particularly in the bulk, however, have thus far remained elusive. Here we report the first characterization of a single dislocation in a freestanding GaAs/In 0.2 Ga 0.8 As/GaAs membrane by synchrotron X-ray micro-beam Laue diffraction. Our experimental X-ray data agrees closely with textbook anisotropic elasticity solutions for dislocations, providing one of few experimental validations of this fundamental theory. On the basis of the experimental uncertainty in our measurements, we predict the X-ray beam size required for threedimensional measurements of lattice strains and rotations due to individual dislocations in the material bulk. These findings have important implications for the in situ study of dislocation structure formation, self-organization and evolution in the bulk.

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“…Alloy segregation in In x Ga 1Àx As is another possible source of surface roughening leading to formation of threading defects. 4 For that reason, compositionally graded MBLs are often found to be limited to low indium containing alloys. However, again, the use of surface acting agents may allow this obstacle to be overcome, as e.g., the surfactant effect of antimony was reported to be useful in controlling epitaxial growth mode, preventing 3-D growth in compressively strained InGaAs layers, mostly with applications to quantum wells (QWs).…”

mentioning

confidence: 99%

Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure

Gocalinska

Manganaro

Pelucchi

2012

Applied Physics Letters

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A virtual substrate for high quality InAs epitaxial layer has been attained via metalorganic vapor-phase epitaxy growth of Sb-assisted In x Ga 1-x As metamorphic buffers, following a convex compositional continuous gradient of the In content from x = 53 % to 100 %. The use of trimethylantimony (or its decomposition products) as a surfactant has been found to crucially enable the control over the defect formation during the relaxation process. Moreover, an investigation of the wafer offcut-dependence of the defect formation and surface morphology has enabled the achievement of a reliably uniform growth on crystals with offcut towards the [111]B direction.

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Compositionally-graded InGaAs–InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

Cited by 35 publications

References 17 publications

Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates

Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates

X-ray micro-beam characterization of lattice rotations and distortions due to an individual dislocation

Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure

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