Comprehensive characterization of low-damaged GaN surface exposed to NH3 plasma toward plasma-induced metalorganic chemical vapor deposition

Kumagai, Naoto; Itagaki, Hideyuki; Kim, Jae-Ho; Hirose, Shingo; Sakakita, Hajime; Wang, Xue‐Lun

doi:10.1016/j.apsusc.2022.153150

Cited by 3 publications

(2 citation statements)

References 116 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Firstly, the previous studies revealed that N 2 plasma exposure on GaN/Al 2 O 3 template showed no significant damage. [ 36 ] Etching is less likely to occur because the Al 2 O 3 substrate is more chemically and mechanically stable than the GaN/Al 2 O 3 template. Secondly, a depth of ≈0.5 nm corresponds to the AlN thickness of 0.42 nm, as evaluated by spectroscopic ellipsometry (not shown).…”

Section: Resultsmentioning

confidence: 99%

“…We propose that the origin of these pits is likely attributed to the uncovered AlN on the Al 2 O 3 substrate for the following reasons. Firstly, the previous studies revealed that N 2 plasma exposure on GaN/Al 2 O 3 template showed no significant damage [36]. Etching is less likely to occur because the Al 2 O 3 substrate is more chemically and mechanically stable than the GaN/Al 2 O 3 template.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Characterization of InN Grown Directly on Sapphire Substrate Using Plasma‐Enhanced Metal Organic Chemical Vapor Deposition

Gotow,

Kumagai,

Shimizu

et al. 2024

Cryst. Res. Technol.

Self Cite

View full text Add to dashboard Cite

Direct InN growth is demonstrated and characterized on a sapphire (Al2O3) substrate by plasma‐enhanced metal–organic chemical vapor deposition using high‐density nitrogen (N2) microstrip‐line microwave plasma. N2 plasma irradiation at 650 °C for 20 min forms AlN on Al2O3 substrate. No peak regarding metallic In droplets is detected from InN/Al2O3 regardless of N2 plasma irradiation. InN is found to be rotated 30° with their a‐axis oriented to become InN // Al2O3. The transition layers are confirmed at the InN/Al2O3 interface regardless of N2 plasma irradiation. The surface of InN consisted of large undulations with root mean square values >30 nm, suggesting that strain relaxation introduces misfit dislocations.

show abstract

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Characterization of InN Grown Directly on Sapphire Substrate Using Plasma‐Enhanced Metal Organic Chemical Vapor Deposition

Gotow,

Kumagai,

Shimizu

et al. 2024

Cryst. Res. Technol.

Self Cite

View full text Add to dashboard Cite

show abstract

Study on the ultraviolet nanosecond laser ablation and heat-affected zone of polydimethylsiloxane films based on comprehensive surface analysis

Zhang

Rong

et al. 2023

Optics & Laser Technology

View full text Add to dashboard Cite

Revealing the mechanism of interfacial adhesion enhancement between the SiO2 film and the GaAs substrate via plasma pre-treatments

He,

Liu,

Gao

et al. 2024

Journal of Vacuum Science &Amp; Technology A

View full text Add to dashboard Cite

The formation mechanism of a highly adherent silicon dioxide (SiO2) film on gallium arsenide (GaAs) substrate by plasma enhanced chemical vapor deposition (PECVD) is proposed. Ar, N2, and NH3 were used as pre-treatment gas to improve the interfacial adhesion. The interfacial adhesion was measured by the cross-cut tape test. By the measurement of spectroscopic ellipsometry and x-ray photoelectron spectroscopy (XPS), it is revealed that nitrogen plasma pre-treatment had formed a very thin GaN transition layer on the surface, which was responsible for the improvement of interfacial adhesion. XPS depth-profiling further confirmed various pre-treatment gases generate plasma mixtures and form thin film layers with different compositions on the GaAs surface. These layers have a significant impact on the adhesion of the subsequently prepared SiO2 film. The primary mechanism for improving interfacial adhesion is the renovation of the substrate composition via plasma pre-treatment by PECVD, which forms a transition layer of nitrides that eliminates the negative effects of oxides on adhesion. This study reveals the mechanism of interfacial adhesion enhancement between SiO2 film and GaAs substrate, which is of significant importance in fabricating high-performance and reliable semiconductor devices.

show abstract

Comprehensive characterization of low-damaged GaN surface exposed to NH3 plasma toward plasma-induced metalorganic chemical vapor deposition

Cited by 3 publications

References 116 publications

Characterization of InN Grown Directly on Sapphire Substrate Using Plasma‐Enhanced Metal Organic Chemical Vapor Deposition

Characterization of InN Grown Directly on Sapphire Substrate Using Plasma‐Enhanced Metal Organic Chemical Vapor Deposition

Study on the ultraviolet nanosecond laser ablation and heat-affected zone of polydimethylsiloxane films based on comprehensive surface analysis

Revealing the mechanism of interfacial adhesion enhancement between the SiO2 film and the GaAs substrate via plasma pre-treatments

Contact Info

Product

Resources

About