Comprehensive evaluation of a silicon-WBG hybrid switch

Deshpande, Amol; Luo, Fang

doi:10.1109/ecce.2016.7854950

Cited by 31 publications

(12 citation statements)

References 12 publications

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“…By contrast, the current commercial WBG power devices are only available at a small current level, which limits the direct replacement of the Si IGBT with WBG devices [1] . It is also impractical to replace a single Si IGBT with multiple WBG devices in parallel at a high current owing to the complexity of the control and the uncertainty [48] .…”

Section: Overview Of Device and Modular Level Applicationsmentioning

confidence: 99%

A review of WBG and Si devices hybrid applications

Zhang

Zheng

Lou

2021

Chin. J. Electr. Eng.

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In recent years, next-generation power semiconductor devices, represented by silicon carbide (SiC) and gallium nitride (GaN), have gradually emerged. Because wide-bandgap (WBG) devices have better electrical characteristics than those of silicon (Si) based devices, they have attracted increased attention both from academic researchers and industrial engineers. Employing WBG devices will further improve the efficiency and power density of power converters. However, the current price of WBG devices remains extremely high. Thus, some researches have focused on the hybrid utilization of WBG devices and Si-based devices to achieve a tradeoff between the performance and cost. To summarize the current research on WBG/Si hybrid applications, the issues mentioned above with representative research approaches, results, and characteristics, are systematically reviewed. Finally, the current research on WBG/Si hybrid applications and their future trends are discussed.

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Section: Overview Of Device and Modular Level Applicationsmentioning

confidence: 99%

A review of WBG and Si devices hybrid applications

Zhang

Zheng

Lou

2021

Chin. J. Electr. Eng.

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“…In some gate drive hardware, the Miller effect of Si IGBT is noticeable, so Option 4 (Fig. 12d) can be chosen for this situation [10] . However, Option 4 cannot give full ZVS, and the losses will increase substantially.…”

Section: Gate Drive Pattern Optimizationmentioning

confidence: 99%

“…2, gate drive pattern Option 4 was used in Ref. [10]; the Miller effect was alleviated, but the losses were increased substantially.…”

Section: Gate Drive Hardware With Miller Clammentioning

confidence: 99%

Review of Si IGBT and SiC MOSFET based on hybrid switch

Ning

Tang

Kang

et al. 2019

Chin. J. Electr. Eng.

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SiC Hybrid switch (HyS) combines low conduction loss of Si IGBT and low switching loss of SiC MOSFET, and the cost is closer to that of Si IGBT. The promising high performances of HyS will bring considerable achievement in terms of enhancing power density of a converter system. By reviewing the gate drive pattern, gate drive hardware, current sharing, module design, converter design, and cost, this paper introduces state-of-the-art SiC HyS.

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“…1. By adjusting the switching sequence of the two switches, the T-type inverter with the hybrid switch (hybrid structure 1) [14]- [16], which is shown in Fig. 2, can have low switching loss from SiC MOSFET switching, and low conduction loss from IGBT conduction.…”

Section: Improved Space Vector Modulation For Neutral-pointmentioning

confidence: 99%

Improved Space Vector Modulation for Neutral-Point Balancing Control in Hybrid-Switch-Based T-Type Neutral-Point-Clamped Inverters With Loss and Common-Mode Voltage Reduction

Peng¹,

Yuan²,

Zhao³

et al. 2019

CPSS TPEA

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This paper compares different space vector modulation (SVM) strategies for neutral-point voltage balancing (NPVB) control in three-level (3-L) T-type neutral-point-clamped (TNPC) inverters, and proposes an improved SVM trimmed for NPVB control in hybrid-switch-based 3-L TNPC inverter with the features of loss and common-mode voltage (CMV) reduction. The proposed SVM strategy uses a new principle of small vector selection and vector sequence, and thus, it can balance the neutral point (NP) potential and achieve soft-switching of clamping leg simultaneously. The paper includes detailed analysis for circuit commutation mode, loss breakdown, and common-mode voltage patterns under different operation conditions. The circuit simulations and experiments are carried out in the last part of this paper to validate the proposed SVM strategy. Index Terms-Electromagnetic interference (EMI), neutralpoint (NP) voltage balance, Si-SiC hybrid switch, space vector modulation (SVM), T-type neutral-point-clamped (TNPC) inverter, wide bandgap (WBG) devices.

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Comprehensive evaluation of a silicon-WBG hybrid switch

Cited by 31 publications

References 12 publications

A review of WBG and Si devices hybrid applications

A review of WBG and Si devices hybrid applications

Review of Si IGBT and SiC MOSFET based on hybrid switch

Improved Space Vector Modulation for Neutral-Point Balancing Control in Hybrid-Switch-Based T-Type Neutral-Point-Clamped Inverters With Loss and Common-Mode Voltage Reduction

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