Comprehensive passivation strategy for achieving inverted perovskite solar cells with efficiency exceeding 23% by trap passivation and ion constraint

Zhang, Fan; Ye, Shuai; Zhang, Hanhong; Zhou, Feifan; Hao, Yuying; Cai, Houzhi; Song, Jun; Qu, Junle

doi:10.1016/j.nanoen.2021.106370

Cited by 75 publications

(60 citation statements)

References 56 publications

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“…PL and TRPL measurements show that passivation with 2Br-Ac successfully passivated the defect-assisted recombination in the triple-cation perovskite active layer. 66 The triple-cation perovskite film on the glass substrate has the highest PL density, indicating significant carrier recombination in the film. Clearly, the photo-quenching efficiency of 2Br-Ac/Spiro-OMeTAD is greater than the others and shows the most effective charge extraction ( Figure S3 ).…”

Section: Results and Discussionmentioning

confidence: 99%

Simultaneous Optimization of Charge Transport Properties in a Triple-Cation Perovskite Layer and Triple-Cation Perovskite/Spiro-OMeTAD Interface by Dual Passivation

et al. 2022

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Molecular engineering of additives is a highly effective method to increase the efficiency of perovskite solar cells by reducing trap states and charge carrier barriers in bulk and on the thin film surface. In particular, the elimination of undercoordinated lead species that act as the nonradiative charge recombination center or contain defects that may limit interfacial charge transfer is critical for producing a highly efficient triple-cation perovskite solar cell. Here, 2-iodoacetamide (2I-Ac), 2-bromoacetamide (2Br-Ac), and 2-chloroacetamide (2Cl-Ac) molecules, which can be coordinated with lead, have been used by adding them into a chlorobenzene antisolvent to eliminate the defects encountered in the triple-cation perovskite thin film. The passivation process has been carried out with the coordination between the oxygen anion (−) and the lead (+2) cation on the enolate molecule, which is in the resonance structure of the molecules. The Spiro-OMeTAD/triple-cation perovskite interface has been improved by surface passivation by releasing HX (X = I, Br) as a byproduct because of the separation of alpha hydrogen on the molecule. As a result, a solar cell with a negligible hysteresis operating at 19.5% efficiency has been produced by using the 2Br-Ac molecule, compared to the 17.6% efficiency of the reference cell.

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Section: Results and Discussionmentioning

confidence: 99%

Simultaneous Optimization of Charge Transport Properties in a Triple-Cation Perovskite Layer and Triple-Cation Perovskite/Spiro-OMeTAD Interface by Dual Passivation

et al. 2022

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“…The defect density N trap in the film can be can be calculated by the following equation: N trap = 2 V TEL εε 0 / eL 2 , where V TFL is the trap‐filled limit voltage, e is the electronic charge, L is the thickness of perovskite film, ε is the relative dielectric constant of perovskite, and ε 0 is the vacuum permittivity. [ 37 ] With P‐T co‐doping, the defect state densities decrease from 2.5 × 10 18 to 1.7 × 10 18 cm –3 , implying the defects on perovskite surface have been effectively passivated by anti‐solvent engineering. In conclusion, the improvement in device performance can be attributed to the co‐passivation of PMMA and TBAPF 6 , as well as the enhanced conductivity brought by TBAPF 6 , suggesting that high efficiency can be achieved through simple doping methods.…”

Section: Resultsmentioning

confidence: 99%

High‐Efficiency Air‐Processed Si‐Based Perovskite Light‐Emitting Devices via PMMA‐TBAPF₆ Co‐Doping

Zhu

Xiao

et al. 2022

Advanced Optical Materials

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used Si only as a substrate and obtained an EQE of 13.7%, both EQE of them are much lower than that with ITO-based PeLEDs. Meanwhile, it must be mentioned that, most of the silicon process manufacturing line is carried out in the atmosphere, so it is still hoped that high-efficiency PeLEDs can be prepared in the air environment. To enhance the Si-based PeLEDs, energy level control, band matching, as well as interface passivation between perovskite and silicon are still problems that need to be solved.In previous works, [6,7] we first fabricated Si-based PeLEDs and enhanced the EQE from less than 0.1% to 0.91% via energy level control. Then, we passivated the interface defects in the device [8] and adjusted the device structure to increase device efficiency. [9] Further, the surface of the perovskite was modified by PMMA anti-solvent doping, so that the device can operate normally in a high humidity atmosphere, and an EQE of 7.5% is obtained. [9] However, although the PMMA protects perovskite from degradation in the air and passivates the perovskite surface, the passivation is not comparable to other materials. [10][11][12] Also, with PMMA doping, the roughness of MAPbI 3 surface increases (Figure S1, Supporting Information). The rough interface will reduce the contact between perovskite and electron transport layer (ETL) ZnO, leading to decreased electron injection. [13] In addition, PMMA is an insulator, which will also hinder carrier injection and cause the imbalance charge injection. Therefore, we need to dope other materials to make up for the deficiency of PMMA.To improve the performance of perovskite and the efficiency of PeLEDs, organoammonium cations doping is always a good choice, and TBAPF 6 has the tetrabutylammonium cations and phosphate anions, both of them can passivate the surface defects of perovskite [14][15][16][17] and significantly enhance the efficiency of perovskite devices. Co-doping TBAPF 6 with PMMA can not only passivate defect states on the perovskite surface, but also increase conductivity of PMMA-modified perovskite, leading to the enhancement of the devices' electroluminescence (EL) performance. So, in this work, we propose a Si-based air-processed near-infrared PeLED with high efficiency by PMMA-TBAPF 6 co-doping. The PMMA protect perovskite from degradation in air-ambient while the TBAPF 6 passivate surface defect states and increase the conductivity. The PeLED with co-doping shows a strong EL intensity, which is 7 times than that of the reference device. The EQE of the PeLED fabricated with the co-doped perovskite is enhanced to 10.4%, which is the highest among allThe preparation of high-efficiency perovskite light-emitting devices (PeLEDs) in the air-ambient has always been a challenge. Herein, the authors propose a Si-based near-infrared air-processed PeLED through the anti-solvent engineering. Two materials, poly(methyl methacrylate) (PMMA) and tetrabutylammonium hexafluorophosphate (TBAPF 6 ) are co-doped into the anti-solvent, the former protects the perovskite from degradat...

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“…This would enable a suitable band bending and better energy‐level alignment, which are beneficial for charge transfer and the V oc improvement. [ 21,45 ]…”

Section: Resultsmentioning

confidence: 99%

“…This would enable a suitable band bending and better energy-level alignment, which are beneficial for charge transfer and the V oc improvement. [21,45] The device performance of the gas-quenched inverted PSCs was evaluated using a configuration of ITO/PTAA/perovskite/ LiF/C 60 /BCP/Cu (Figure 3a). 2.0 mg mL À1 of BASCN is selected for the BASCN treatment based on a concentration screening experiment (Figure S4, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

An Integrated Bulk and Surface Modification Strategy for Gas‐Quenched Inverted Perovskite Solar Cells with Efficiencies Exceeding 22%

et al. 2022

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Inverted perovskite solar cells (PSCs) prepared by the antisolvent method have achieved power conversion efficiencies (PCEs) of over 23%, but they are not ideal for device upscaling. In contrast, gas‐quenched PSCs offer great potential for upscaling, but their performance still lags behind. Herein, the gas‐quenched films through both surface and bulk modifications are upgraded. First, a novel surface modifier, benzylammonium thiocyanate, is found to allow remarkably improved surface properties, but the PCE gain is limited by the existence of longitudinally multiple grains. Thus, methylammonium chloride additive as a second modifier to realize monolithic grains is further utilized. Such an integrated strategy enables the average open‐circuit voltage of the gas‐quenched PSCs to increase from 1.08 to 1.15 V, leading to a champion PCE of 22.3%. Moreover, the unencapsulated device shows negligible degradation after 150 h of maximum power point operation under simulated 1 sun illumination in N2.

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Comprehensive passivation strategy for achieving inverted perovskite solar cells with efficiency exceeding 23% by trap passivation and ion constraint

Cited by 75 publications

References 56 publications

Simultaneous Optimization of Charge Transport Properties in a Triple-Cation Perovskite Layer and Triple-Cation Perovskite/Spiro-OMeTAD Interface by Dual Passivation

Simultaneous Optimization of Charge Transport Properties in a Triple-Cation Perovskite Layer and Triple-Cation Perovskite/Spiro-OMeTAD Interface by Dual Passivation

High‐Efficiency Air‐Processed Si‐Based Perovskite Light‐Emitting Devices via PMMA‐TBAPF₆ Co‐Doping

An Integrated Bulk and Surface Modification Strategy for Gas‐Quenched Inverted Perovskite Solar Cells with Efficiencies Exceeding 22%

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Comprehensive passivation strategy for achieving inverted perovskite solar cells with efficiency exceeding 23% by trap passivation and ion constraint

Cited by 75 publications

References 56 publications

Simultaneous Optimization of Charge Transport Properties in a Triple-Cation Perovskite Layer and Triple-Cation Perovskite/Spiro-OMeTAD Interface by Dual Passivation

Simultaneous Optimization of Charge Transport Properties in a Triple-Cation Perovskite Layer and Triple-Cation Perovskite/Spiro-OMeTAD Interface by Dual Passivation

High‐Efficiency Air‐Processed Si‐Based Perovskite Light‐Emitting Devices via PMMA‐TBAPF6 Co‐Doping

An Integrated Bulk and Surface Modification Strategy for Gas‐Quenched Inverted Perovskite Solar Cells with Efficiencies Exceeding 22%

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High‐Efficiency Air‐Processed Si‐Based Perovskite Light‐Emitting Devices via PMMA‐TBAPF₆ Co‐Doping