2008 IEEE International Reliability Physics Symposium 2008
DOI: 10.1109/relphy.2008.4559012
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Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques

Abstract: INTRODUCTIONIn this work, we combine our recently developed recovery free On-the-Fly Interface Traps measurement (OFIT) [1] and Fast-Pulsed-Measurement (FPM) [2,3] to conduct a comprehensive study of BTI degradations for both n-and p-MOSFETs with SiON gate dielectric. The results provide the most reliable data for the understanding and modeling of BTI degradation and also provide new insights to re-access the impact of BTI in logic and analog circuits and SRAM applications.DEVICE FABRICATIONS AND MEASUREMENTS … Show more

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Cited by 5 publications
(3 citation statements)
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“…For Si MOSFET with SiON gate dielectric, BTI stress induces dominant donor interface traps [27], [28], and very small amount of acceptor interface traps [29]. When using DC current measurement, the donor interface traps induce negative V g shift in the p-MOSFET under negative BTI stress [18], [19], [27].…”
Section: Donor or Acceptor Traps? A Unified Border Trap Modelmentioning
confidence: 99%
See 1 more Smart Citation
“…For Si MOSFET with SiON gate dielectric, BTI stress induces dominant donor interface traps [27], [28], and very small amount of acceptor interface traps [29]. When using DC current measurement, the donor interface traps induce negative V g shift in the p-MOSFET under negative BTI stress [18], [19], [27].…”
Section: Donor or Acceptor Traps? A Unified Border Trap Modelmentioning
confidence: 99%
“…When using DC current measurement, the donor interface traps induce negative V g shift in the p-MOSFET under negative BTI stress [18], [19], [27]. The small amount of acceptor interface traps induce very small positive V g shift in the n-MOSFET under PBTI stress [29] while donor interface traps keep neutral under inversion surface. For Si n-MOSFET with high-k gate dielectric HfO 2 , I s -V g curve sustains positive shift in the PBTI stress phase and partially recover in the recovery phase [25].…”
Section: Donor or Acceptor Traps? A Unified Border Trap Modelmentioning
confidence: 99%
“…Even if the test data can be fitted well with a power law after such a delay, the time exponent, n, depends on measurement speed [14,20]. Fig.1a shows that the reported time exponent, n, has a wide spread [8,17,[21][22][23][24][25][26][27], questioning the prediction accuracy when extrapolating based on these n values. To extract the correct NBTI kinetics, the as-grown-generation (A-G) model has been proposed [12,28].…”
Section: Introductionmentioning
confidence: 99%