Comprehensive study of the Raman shifts of strained silicon and germanium

Peng, C.-Y.; Huang, Chia-Hong; Fu, Yen-Chun; Yu, Yang; Lai, Chun-Ming; Chang, Shuo‐Hung; C, Liu

doi:10.1063/1.3110184

Cited by 78 publications

(64 citation statements)

References 24 publications

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“…It is then difficult to use this technique alone. The interpretation of the multiwavelength Raman microscopy results can be improved in the future by developing multiscale calculations (molecular dynamics) to help interpreting quantitatively band shifts in order to determine precisely the amount of local stress (itself induced by the type defects in the material), as it was done in silicon and germanene [68,69]. Using other techniques to measure the amount of pollution will also help the understanding of the underlying mechanisms at play.…”

Section: Summary/discussionmentioning

confidence: 99%

Preparing the future post-mortem analysis of beryllium-based JET and ITER samples by multi-wavelengths Raman spectroscopy on implanted Be, and co-deposited Be

et al. 2017

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This study demonstrates that Raman microscopy is a suitable technique for future post mortem analyses of JET and ITER plasma facing components. We focus here on laboratory deposited and bombarded samples of beryllium and beryllium carbides and start to build a reference spectral databases for fusion relevant beryllium-based materials. We identified the beryllium phonon density of states, its second harmonic and E 2G and B 2G second harmonic and combination modes for defective beryllium in the spectral range 300-700 and 700-1300 cm -1 , lying close to Be-D modes of beryllium hydrides. We also identified beryllium carbide signature, Be 2 C, combining Raman microscopy and DFT calculation. We have shown that, depending on the optical constants of the material probed, in depth sensitivity at the nanometer scale can be performed using different wavelengths. This way, we demonstrate that multi-wavelength Raman microscopy is sensitive to in-depth stress caused by ion implantation (down to ≈30 nm under the surface for Be) and Be/C concentration (down to 400 nm or more under the surface for Be+C), which is a main contribution of this work. The depth resolution reached can then be adapted for studying the supersaturated surface layer found on tokamak deposits.2

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Section: Summary/discussionmentioning

confidence: 99%

Preparing the future post-mortem analysis of beryllium-based JET and ITER samples by multi-wavelengths Raman spectroscopy on implanted Be, and co-deposited Be

et al. 2017

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“…For example, light-induced deformation in nonpolar semiconductors, such as crystalline germanium and silicon, is due to a slight change in the atomic bond length induced by excess excited carriers in the conduction band. However, the resulting strain is very small (0.08% and 0.09% for germanium and silicon, respectively)16. In organic polymer systems, larger strain is obtained through photo-induced molecular reorientation or ionization reactions17.…”

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confidence: 99%

Photostriction of strontium ruthenate

et al. 2017

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Transition metal oxides with a perovskite crystal structure exhibit a variety of physical properties associated with the lattice. Among these materials, strontium ruthenate (SrRuO3) displays unusually strong coupling of charge, spin and lattice degrees of freedom that can give rise to the photostriction, that is, changes in the dimensions of material due to the absorption of light. In this study, we observe a photon-induced strain as high as 1.12% in single domain SrRuO3, which we attribute to a nonequilibrium of phonons that are a result of the strong interaction between the crystalline lattice and electrons excited by light. In addition, these light-induced changes in the SrRuO3 lattice affect its electrical resistance. The observation of both photostriction and photoresistance in SrRuO3 suggests the possibility of utilizing the mechanical and optical functionalities of the material for next-generation optoelectronics, such as remote switches, light-controlled elastic micromotors, microactuators and other optomechanical systems.

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“…where is the Ge concentration. However, this type of measurement is complicated by the fact that the peak location also depends on strain [52][53][54]. In fact, an in-plane strain of 1% will induce a peak shift of approximately 3.85 cm −1 [52].…”

Section: Materials Characterisationmentioning

confidence: 99%

Localised Tuneable Composition Single Crystal Silicon-Germanium-on-Insulator for Low Cost Devices

Littlejohns¹,

Bucio²,

Nedeljković³

et al. 2016

Advances in Materials Science and Engineering

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The realisation of high quality silicon-germanium-on-insulator (SGOI) is a major goal for the field of silicon photonics because it has the potential to enable extremely low power active devices functioning at the communication wavelengths of 1.3 m and 1.55 m. In addition, SGOI has the potential to form faster electronic devices such as BiCMOS transistors and could also form the backbone of a new silicon photonics platform that extends into the mid-IR wavelengths for applications in, amongst others, sensing and telecoms. In this paper, we present a novel method of forming single crystal, defect-free SGOI using a rapid melt growth technique. We use tailored structures to form localised uniform composition SGOI strips, which are suitable for the state-of-the-art device fabrication. This technique could pave the way for the seamless integration of electronic and photonic devices using only a single, low cost Ge deposition step.

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Comprehensive study of the Raman shifts of strained silicon and germanium

Cited by 78 publications

References 24 publications

Preparing the future post-mortem analysis of beryllium-based JET and ITER samples by multi-wavelengths Raman spectroscopy on implanted Be, and co-deposited Be

Preparing the future post-mortem analysis of beryllium-based JET and ITER samples by multi-wavelengths Raman spectroscopy on implanted Be, and co-deposited Be

Photostriction of strontium ruthenate

Localised Tuneable Composition Single Crystal Silicon-Germanium-on-Insulator for Low Cost Devices

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