Comprehensive test pattern and approach for characterizing SOS technology

Abstract

National Bureau of Standards reports NBS research and development in those disciplines of the physical and engineering sciences in which the Bureau is active. These include physics, chemistry, engineering, mathematics, and computer sciences. Papers cover a broad range of subjects, with major emphasis on measurement methodology and the basic technology underlying standardization. Also included from time to time are survey articles on topics closely related to the Bureau's technical and scientific programs. As a special service to subscribers each issue contains complete citations to all recent Bureau publications in both NBS and non-NBS media. Issued six times a year. Annual subscription;

Method to determine the quality of sapphire

“…In order to understand the influence of the effects just described, it is necessary to examine the profile for each parameter measured across each wafer together with the statistical data for the parameter measured on each wafer. A complete description of the analysis is given in reference [5].…”

“…The second experimental set of SOS composites was fabricated into device structures using the same test pattern as before [5]. The silicon films were not ion-implanted in the channel region in this case so that device properties would be more characteristic of the materials used, i.e., not influenced by intentionally added dopant.…”

“…The application of these techniques will be described later in the text Correlation of the surface quality of the starting materials (sapphire substrates and heteroepitaxial silicon films) with discrete device performance is an important part of this study. The test structure used in device fabrication has been described previously [5].…”

“…The pattern described in reference [5] was then used in device fabrication and testing. All device testing was performed automatically and included: (1) gate threshold voltage, (2) device leakage current, (3) device drive current, and (4) drain breakdown voltage.…”

“…Dependence of infrared reflectance ratio for variously polished sapphire substrates, on polishing grit (diamond) size Correlation of x-ray diffraction peak half -width for various silicon films, with reflectance ratio for the corresponding sapphire substrates 11 Figure 4. Correlation of x-ray diffraction peak half-width with ultraviolet reflectance for heteroepitaxial silicon on sapphire 12 Figure 5. Correlation of SOS device channel current with infrared reflectance data for corresponding sapphire substrates 12 Figure 6.…”