Computation of Interfacial Thermal Resistance by Phonon Diffuse Mismatch Model

Wang, Haitao; Xu, Yibin; Shimono, Masato; Tanaka, Yoshihisa; Yamazaki, Masayoshi

doi:10.2320/matertrans.maw200717

Cited by 94 publications

(87 citation statements)

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“…2 and Fig. 4(a)), the thermal resistance of the cantilever and tip is given by Given the Kapitza resistance at the tip and substrate interface affects significantly SThM measurements [27,36,39,47], it must be considered to achieve a realistic model of SThM measurements. Literature estimates of Kapitza resistance values vary significantly and are not always available for the particular materials studied.…”

Section: Comparison Of Fea Simulation With Experimental Resultsmentioning

confidence: 99%

“…In the modelling Si 3 N 4 (θ D ≈ 923 К) [48] was replaced by magnesium oxide (MgO) with (θ D ≈ 941 К) [39] and SiO 2 with (θ D ≈ 470 К) [39]. MWCNT and graphene were extrapolated to diamond with θ D = 1860 K [39]. For Al surface, θ D = 394 K [39].…”

Section: Comparison Of Fea Simulation With Experimental Resultsmentioning

confidence: 99%

“…Literature estimates of Kapitza resistance values vary significantly and are not always available for the particular materials studied. Therefore, thermal resistances reported elsewhere [39] were used for different interfaces to select pairs of materials which exhibit similar thermal properties, e.g. polymer and metals to match the SThM probe and the sample material.…”

Section: Comparison Of Fea Simulation With Experimental Resultsmentioning

confidence: 99%

“…For other pairs, the values were selected according to similarity of speed of sound in the materials (acoustic phonons) and their Debye temperature data (θ D ). In the modelling Si 3 N 4 (θ D ≈ 923 К) [48] was replaced by magnesium oxide (MgO) with (θ D ≈ 941 К) [39] and SiO 2 with (θ D ≈ 470 К) [39]. MWCNT and graphene were extrapolated to diamond with θ D = 1860 K [39].…”

Section: Comparison Of Fea Simulation With Experimental Resultsmentioning

confidence: 99%

“…Here, ts   is the thermal contact resistivity which, in this approximation of the contact between non-metallic materials, depends on the ratio of the Debye temperatures [39] and r t-s the effective radius (that may be larger than the NW radius). It should be noted, that for high thermal conductivity materials, the effective radius is close to the contact radius since the thermal transport via the surrounding air contributes less to the total heat flux.…”

Section: Contact Geometry (A)mentioning

confidence: 99%

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Scanning thermal microscopy with heat conductive nanowire probes

et al. 2016

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(2016) 'Scanning thermal microscopy with heat conductive nanowire probes.', Ultramicroscopy., 162 . pp. 42-51.Further information on publisher's website:http://dx.doi.org/10. 1016/j.ultramic.2015.12.006 Publisher's copyright statement: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. AbstractScanning thermal microscopy (SThM), which enables measurement of thermal transport and temperature distribution in devices and materials with nanoscale resolution is rapidly becoming a key approach in resolving heat dissipation problems in modern processors and assisting development of new thermoelectric materials. In SThM, the self-heating thermal sensor contacts the sample allowing studying of the temperature distribution and heat transport in nanoscaled materials and devices. The main factors that limit the resolution and sensitivities of SThM measurements are the low efficiency of thermal coupling and the lateral dimensions of the probed area of the surface studied. The thermal conductivity of the sample plays a key role in the sensitivity of SThM measurements. During the SThM measurements of the areas with higher thermal conductivity the heat flux via SThM probe is increased compared to the areas with lower thermal conductivity. For optimal SThM measurements of interfaces between low and high thermal conductivity materials, well defined nanoscale probes with high thermal conductivity at the probe apex are required to achieve a higher quality of the probe-sample thermal contact while preserving the lateral resolution of the system.In this paper, we consider a SThM approach that can help address these complex problems by using high thermal conductivity nanowires (NW) attached to a tip apex.We propose analytical models of such NW-SThM probes and analyse the influence of the contact resistance between the SThM probe and the sample studied. The latter becomes particularly important when both tip and sample surface have high thermal conductivities.2 These models were complemented by finite element analysis simulations and experimental tests using prototype probe where a multiwall carbon nanotube (MWCNT) is exploited as an excellent example of a high thermal conductivity NW. These results elucidate critical relationships between the performance of the SThM probe on one hand and thermal conductivity, geometry of the probe and its components on the other. As such, they provide a pathway for optimizing current SThM for nanothermal studies of high thermal conductivity materials. Comparison between experimental and modelling results allows...

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Section: Comparison Of Fea Simulation With Experimental Resultsmentioning

confidence: 99%

Section: Comparison Of Fea Simulation With Experimental Resultsmentioning

confidence: 99%

Section: Comparison Of Fea Simulation With Experimental Resultsmentioning

confidence: 99%

Section: Comparison Of Fea Simulation With Experimental Resultsmentioning

confidence: 99%

Section: Contact Geometry (A)mentioning

confidence: 99%

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Photothermal Heating and Cooling of Nanostructures

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A vast range of insulating, semiconducting, and metallic nanomaterials have been studied over the past several decades with the aim of understanding how continuous-wave or pulsed laser radiation can influence their chemical functionality and local environment. Many fascinating observations have been made during laser irradiation including, but not limited to, the superheating of solvents, mass-transport-mediated morphology evolution, photodynamic therapy, morphology dependent resonances, and a range of phase transformations. In addition to laser heating, recent experiments have demonstrated the laser cooling of nanoscale materials through the emission of upconverted, anti-Stokes photons by trivalent rare-earth ions. This Focus Review outlines the analytical modeling of photothermal heat transport with an emphasis on the experimental validation of anti-Stokes laser cooling. This general methodology can be applied to a wide range of photothermal applications, including nanomedicine, photocatalysis, and the synthesis of new materials. The review concludes with an overview of recent advances and future directions for anti-Stokes cooling.

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Computation of Interfacial Thermal Resistance by Phonon Diffuse Mismatch Model

Cited by 94 publications

References 5 publications

Scanning thermal microscopy with heat conductive nanowire probes

Scanning thermal microscopy with heat conductive nanowire probes

Interfacial Thermal Transport in Monolayer MoS₂‐ and Graphene‐Based Devices

Photothermal Heating and Cooling of Nanostructures

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Computation of Interfacial Thermal Resistance by Phonon Diffuse Mismatch Model

Cited by 94 publications

References 5 publications

Scanning thermal microscopy with heat conductive nanowire probes

Scanning thermal microscopy with heat conductive nanowire probes

Interfacial Thermal Transport in Monolayer MoS2‐ and Graphene‐Based Devices

Photothermal Heating and Cooling of Nanostructures

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Product

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Interfacial Thermal Transport in Monolayer MoS₂‐ and Graphene‐Based Devices