Computational Investigation of Negative Capacitance Coaxially Gated Carbon Nanotube Field-Effect Transistors

Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance

“…From simulation point of view, the ferroelectric field-effect transistors endowed with a MFMIS system can be treated as a baseline field-effect transistor in series with a ferroelectric capacitor [ 25 , 40 , 41 , 42 , 43 , 44 ]. Therefore, conceptually, the numerical modeling of the negative capacitance (MFMIS) nanodevices is divided into two parts [ 45 ]. The first step of simulation deals with the baseline device as mentioned above in the Section 3 .…”

“…After the self-consistency, the gate charge ( Q G ) is numerically extracted and used to compute the voltage across the FE material ( V FE ), using the 1-D steady-state Landau–Khalatnikov equation, which is given as follows [ 34 ]: V FE = 2 αt FE Q G + 4 βt FE Q G 3 + 6 γt FE Q G 5 where t FE is the FE thickness; and (α, β, and γ) are the FE Landau coefficients, which are chosen to be as those of the Al-doped HfO 2 FE parameters [ 25 , 44 , 45 , 46 ]. After computing V FE , the external gate voltage ( V GS ) of the EDJL-CNTTFET is normally computed by using the following equation [ 25 , 39 , 40 , 41 , 42 , 43 , 44 , 45 ]: V GS = V INT + V FE where V INT is the internal metal-gate voltage considered in the baseline self-consistent quantum simulation. For more computational information regarding the quantum simulation of ultrascaled MFMIS FE-FETs, we refer the reader to our previous works [ 19 , 25 , 45 ].…”

Breaking the Limits in Ternary Logic: An Ultra-Efficient Auto-Backup/Restore Nonvolatile Ternary Flip-Flop Using Negative Capacitance CNTFET Technology

“…During the last few years, negative capacitance FETs with outstanding electronic properties have gained considerable attention as a potential candidate beyond conventional CMOS technology [12], [13], [27]. A negative capacitance transistor's functionality depends on two fundamental factors: (1) the utilized ferroelectric material, and (2) the baseline transistor.…”

“…1. It is worth noting that a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure has been considered due to the better I ON /I OFF current ratio for ultra-scaled dimensions [12]. In a NC-CNTFET, parallel semiconducting carbon nanotubes are placed over an insulator such as SiO 2 to establish the channel region.…”

“…Ferroelectric field-effect transistors (FeFETs) have recently been introduced as encouraging candidates to overcome the inherent limitations in conventional silicon-based technologies [12], [13]. FeFETs presents two intriguing features: steep-slope and hysteresis operation modes.…”