Computational method to estimate Single Event Upset rates in an accelerator environment

Huhtinen, M.; Faccio, F.

doi:10.1016/s0168-9002(00)00155-8

Cited by 106 publications

(95 citation statements)

References 9 publications

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“…Huhtinen and Faccio [12] describe a computational method to evaluate SEU rates in an accelerator environment that is relevant to the present study. Their paper contains references to earlier related work.…”

Section: Introductionmentioning

confidence: 99%

Single event upset studies with the optical links of the ATLAS semiconductor tracker

Dowell

Homer

Mahout

et al. 2002

Nuclear Instruments and Methods in Physics Research Section A:

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Section: Introductionmentioning

confidence: 99%

Single event upset studies with the optical links of the ATLAS semiconductor tracker

Dowell

Homer

Mahout

et al. 2002

Nuclear Instruments and Methods in Physics Research Section A:

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“…The prediction of the single bit upset cross section is very difficult because a lot of parameters came into play [13]. Nevertheless, some gross features of the data can be understood simply by some general considerations.…”

Section: Discussionmentioning

confidence: 99%

Single event effects in the pixel readout chip for BTeV

Chiodini¹,

Appel²,

Cardoso³

et al. 2003

Nuclear Instruments and Methods in Physics Research Section A:

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In future experiments the readout electronics for pixel detectors is required to be resistant to a very high radiation level. In this paper we report on irradiation tests performed on several preFPIX2 prototype pixel readout chips for the BTeV experiment exposed to a 200 MeV proton beam. The prototype chips have been implemented in commercial 0.25 µm CMOS processes following radiation tolerant design rules. The results show that this ASIC design tolerates a large total radiation dose, and that radiation induced Single Event Effects occur at a manageable level.

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“…A layer of 7.5 cm polyethylene reduces these values by about a factor of two. No attempt has been made to estimate Single-Event Effects [10].…”

Section: Discussionmentioning

confidence: 99%

Radiation Damage to Electronics in the Beam Tunnel of the Next Linear Collider

Roesler¹,

Liu²,

Rokni

2000

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Radiation damage to electronics in the Linac tunnel of the Next Linear Collider due to ionizing and non-ionizing effects has been estimated with detailed FLUKA simulations. Results for total dose deposited in silicon and for displacement damage by neutrons, protons and charged pions are presented. It is shown that non-radiation-hard electronics could be severely damaged unless sufficiently shielded against radiation. A scenario is proposed in which the electronic components are located in niches in the beam tunnel wall which are shielded by layers of polyethylene.

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Computational method to estimate Single Event Upset rates in an accelerator environment

Cited by 106 publications

References 9 publications

Single event upset studies with the optical links of the ATLAS semiconductor tracker

Single event upset studies with the optical links of the ATLAS semiconductor tracker

Single event effects in the pixel readout chip for BTeV

Radiation Damage to Electronics in the Beam Tunnel of the Next Linear Collider

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