Computational simulations of Ribbon-Growth on substrate for photovoltaic silicon wafer

Jeong, Hyomin; Chung, Hanshik; Lee, Taewoo

doi:10.1016/j.jcrysgro.2009.11.031

Cited by 6 publications

(1 citation statement)

References 15 publications

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“…The electromagnetic force field, however, typically gives rise to a domeshaping of the melt in the casting frame, which represents a free surface problem complicating the numerical simulation of the system. There is only very limited literature about numerical simulations of the silicon melt flow for the RGS process (e.g., [6,7]). Moreover, almost all related simulations were mainly focused on the crystallization process and solidification front shape of silicon ribbons.…”

Section: Introductionmentioning

confidence: 99%

Modeling electromagnetically driven free-surface flows motivated by the Ribbon Growth on Substrate (RGS) process

Beckstein

Galindo

Schönecker

et al. 2017

IOP Conf. Ser.: Mater. Sci. Eng.

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Abstract. The Ribbon Growth on Substrate (RGS) technology is a crystallization technique that allows direct casting of silicon wafers and sheets of advanced metal-silicide compounds. With the potential of reaching high crystallization rates, it promises a very efficient approach for future photo-voltaic silicon wafer production compared to well-established processes in industry. However, a number of remaining problems, like process stability and controllability, need to be addressed for the RGS technology to eventually become a competitor in the near future. In this regard, it is very desirable to gain detailed insights into the characteristic process dynamics. To comply with this demand, we have developed a new numerical tool based on OpenFOAM (foam-extend), capable of simulating the free-surface dynamics of the melt flow under the influence of an applied alternating magnetic field. Our corresponding model thereby resolves the interaction of hydrodynamic and magnetodynamic effects in three-dimensional space. Although we currently focus on the RGS process, the modeling itself has been formulated in a more general form, which may be used for the investigation of similar problems, too. Here we provide a brief overview of these developments.

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Section: Introductionmentioning

confidence: 99%

Modeling electromagnetically driven free-surface flows motivated by the Ribbon Growth on Substrate (RGS) process

Beckstein

Galindo

Schönecker

et al. 2017

IOP Conf. Ser.: Mater. Sci. Eng.

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Silicon solar cell production

Ranjan

Balaji

Panella

et al. 2011

Computers & Chemical Engineering

109

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Computational Study of Contact Solidification for Silicon Film Growth in the Ribbon Growth on Substrate System

Askarian¹,

2013

Journal of Thermal Science and Engineering Applications

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Ribbon growth on substrate (RGS) has emerged as a new method for growing silicon films at low cost for photovoltaic applications by contact solidification. Thermal conditions play an important role in determining the thickness and quality of the as-grown films. In this study, we have developed a mathematical model for heat transfer, fluid flow, and solidification in the RGS process. In particular, a semi-analytical approach is used in this model to predict solidification with a sharp solid–liquid interface without using a moving grid system. A more realistic analytical relationship that considers the varying rate of heat removal at the interface has been developed to evaluate the effective heat transfer rate, solidification rate, and solidification front. These models were used to predict the flow patterns in the crucible, the temperature distributions in the system, the velocity fields in the crucible, the solidification rates, and the film thicknesses. The effects of important operational parameters, such as pulling speed, preheat temperature, and thermal properties of the substrate material, have been examined. In addition, an order of magnitude analysis has been performed to understand heat transfer in the growing film and substrate. This analysis leads to a simplified mathematical model for heat transfer and solidification, which can be resolved analytically to derive theoretical solutions for the effective heat transfer coefficient, the rate of solidification, and the film thickness. The results show that the solidification rate varies largely on the substrate. The non-uniformity can be mitigated by altering the temperature distribution in the silicon melt through manipulating heat generation in the top heater. The rates of solidification and film thickness are very sensitive to both the thermal conductivity and preheat temperature of the substrate. Increasing pulling velocity will increase the rate of solidification at the leading edge but reduce the film thickness. The numerical model and the theoretical solution provide an important tool for thermal design and optimization of the RGS system.

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Computational simulations of Ribbon-Growth on substrate for photovoltaic silicon wafer

Cited by 6 publications

References 15 publications

Modeling electromagnetically driven free-surface flows motivated by the Ribbon Growth on Substrate (RGS) process

Modeling electromagnetically driven free-surface flows motivated by the Ribbon Growth on Substrate (RGS) process

Silicon solar cell production

Computational Study of Contact Solidification for Silicon Film Growth in the Ribbon Growth on Substrate System

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