Computational study on transamination of alkylamides with NH3 during metalorganic chemical vapor deposition of tantalum nitride

Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys

“…The resistivity of TaN films deposited at 350 °C is plotted in Figure b as a function of the NH 3 flow for different injection frequencies ν, at a constant injector opening time of 10 ms. The presence of NH 3 is known to be beneficial for TBTDET deposited TaN in order to form a dense film and to reduce the carbon content by formation of volatile byproducts such as short-chain amines. − The reduced reactivity at lower temperatures is compensated by an increased NH 3 flow and leads to a significant decrease of the resistivity. With optimized deposition parameters the resistivity of TaN could be reduced by an order of magnitude, from 2000 μΩ·cm down to 200 μΩ·cm.…”

Area-Selective Deposition of Tantalum Nitride with Polymerizable Monolayers: From Liquid to Vapor Phase Inhibitors

“…For instance, in thermal ALD processes, PDMAT undergoes the thermal dissociation of ligands, generating a variety of reactive vapor components, where the starting PDMAT specie is only a minor component . On the other hand, TBTDMT, with an imido ligand, shows some level of additional control where, although the diethylamino ligands thermally dissociate, the tert -butylimido remains bonded to tantalum at typical deposition temperatures (e.g., 250–300 °C) . In the subsequent half-cycle with NH 3 , the tert -butylimido-ligand is preferentially displaced through ligand dissociation.…”

“…33 On the other hand, TBTDMT, with an imido ligand, shows some level of additional control where, although the diethylamino ligands thermally dissociate, the tert-butylimido remains bonded to tantalum at typical deposition temperatures (e.g., 250−300 °C). 34 In the subsequent half-cycle with NH 3 , the tertbutylimido-ligand is preferentially displaced through ligand dissociation. Both of these precursors were evaluated for ALD.…”

Surface Chemistry of Pentakis(dimethylamido)tantalum on Ta Surfaces

“…Another observation from our work that corroborates previous observations is the fact that DMA generation is enhanced by NH 3 addition to the gas mixture. This may perhaps be explained by a transamination reaction, but the mechanistic details of how that may happen have not been determined, or even discussed much, in the literature. ,,,− Regardless, a couple of interesting observations from the data in Figure add to our knowledge on the kinetics of this step. First, the effect of ammonia starts to be noticeable only at surface temperatures of 550 K or above.…”