Computer-aided two-dimensional analysis of bipolar transistors

Abstract:In this paper, we consider the problem of the research and development of high-speed semiconductor photodetectors suitable for operation as parts of on-chip optical interconnections together with the high-speed laser modulators based on the A III B V nanoheterostructures. This research is aimed at the development of the models and modelling aids designed for the simulation of carrier transport and accumulation processes taking place in on-chip photosensitive devices during the detection of subpicosecond laser pulses. Another aim of the paper is to apply the aforementioned aids for the investigation of GaAs p-i-n and Schottky-barrier photodiodes. We propose the non-stationary drift-diffusion models, an original numerical simulation technique and the applied software allowing one to simulate the photosensitive devices with different electrophysical, constructive and technological parameters. We have taken into account different kinds of carrier generation and recombination processes, the effects of electron intervalley transition and carrier drift velocity saturation in order to improve the simulation results' adequacy. We have concluded that the influence of these effects on the performance of photodetectors for on-chip optical interconnections is significant. The response time of GaAs p-i-n and Schottky-barrier photodiodes calculated taking into account the drift velocity dependence on electric field intensity is insufficient for the adequate detection of subpicosecond laser pulses. According to the simulation results, it is reasonable to develop the methods aimed at the increase in the drift velocity of charge carriers in the photodetector active region by means of built-in electric field reduction.

show abstract

“…We apply the standard Gummel iteration method [30] and traditional Slotboom formulation [31] for this purpose.…”

Section: Models and Simulation Methodsmentioning

confidence: 99%

“…Slotboom proposed the following current density equations in terms of F n , F p , ϕ in the paper [31]:…”

Section: Models and Simulation Methodsmentioning

confidence: 99%

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Pisarenko

Ryndin

2016

Electronics

View full text Add to dashboard Cite

show abstract

“…In the last two decades, several computer-simulation programs have been written with the aim of finding the potential and mobile charge density distribution in conventional devices [2][3][4][5][6], Ravailoli et al [7] and Kerkhoven et al [8,9] have reported self-consistent computations of the electronic states of a quantum wire while Kumar et al [10][11][12] have presented self-consistent numerical solutions of the Poisson and Schrödinger equations for a GaAs-Al x Ga 1−x As quantum dot. Kerkhoven et al [8,9] work is for two-dimensional (2D) devices.…”

Section: Introductionmentioning

confidence: 99%

Numerical modeling of silicon quantum dots

Udipi

Vasileska

Ferry

1996

Superlattices and Microstructures

View full text Add to dashboard Cite

“…In the diffusion-dominated regime, (33) degenerates into the classical (optimal) O(h) estimate for the P 1 conforming finite elements, since ∇ψ ∞,T h → 0 (or, equivalently, ∆ψ M,T h → 0), and B(±η) → 1 for η → 0. In the presence of a large potential drop across the mesh element T (i.e., for fixed mesh size h, when ∇ψ ∞,T h ≈ 1), it turns out that B(−η) → η, for η 1, so that the approximation error (33) is of order ∆ψ…”

Section: Remark 32mentioning

confidence: 99%

A nonconforming exponentially fitted finite element method for two-dimensional drift-diffusion models in semiconductors

Sacco

Gatti

Gotusso

1999

Numer. Methods Partial Differential Eq.

View full text Add to dashboard Cite

A new nonconforming exponentially fitted finite element for a Galerkin approximation of convectiondiffusion equations with a dominating advective term is considered. The attention is here focused on the drift-diffusion current continuity equations in semiconductor device modeling. The scheme extends to the two-dimensional case, the well known Scharfetter-Gummel method, by imposing a divergence-free current over each element of the triangulation. Convergence of the method in the energy norm is proved and some numerical results are included.

show abstract

Computer-aided two-dimensional analysis of bipolar transistors

Cited by 205 publications

References 37 publications

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Numerical modeling of silicon quantum dots

A nonconforming exponentially fitted finite element method for two-dimensional drift-diffusion models in semiconductors

Contact Info

Product

Resources

About