Computer Simulation of Gamma Irradiation Energy Deposition in MOSFET Dosimeters

Stanković, S.; Ilić, Radovan; Osmokrović, P.; Lončar, B.; Vasić, A.

doi:10.1109/tps.2006.883327

Cited by 8 publications

(4 citation statements)

References 14 publications

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“…FOTELP-2K10 code has great competency in successful resolving of radiation transport problems which review interactions gamma and X-rays with electronic components and devices, such as MOSFET dosimeters [12,13], CdZnTe detector [14] and diamond detector [15].…”

Section: Methodsmentioning

confidence: 99%

Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo

et al. 2011

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This work presents a characterization of radiation absorption properties of silicon carbide (SiC) as semiconductor for the realization of detectors for X-rays. SiC detectors can potentially reach superior performance with respect to all the other semiconductors presently employed in hazardous environments in nuclear and space science and technology. Physics and numerical modeling of photons transport through SiC detector is incorporated in non-destructive Monte Carlo method for determining the energy deposited and dose distribution. The Monte Carlo code has been adopted for numerical simulations for different detector conditions and configurations. The X-ray characterization of new SiC structures originates the improving of design of these detector systems.

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Section: Methodsmentioning

confidence: 99%

Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo

et al. 2011

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“…We select the Penelope physical model to verify the effect of secondary electrons on the SEU response. 21) The use of the model code has a series of physical processes, such as photoelectric effects, the Compton effect, and bremsstrahlung, where reliable electronic results can be obtained at low energy.…”

Section: Geometric Structure and Physical Model Descriptionmentioning

confidence: 99%

Research of X-ray induced single event soft errors in 45 nm SRAM

Yang¹,

Guo²,

Zhang³

et al. 2018

Jpn. J. Appl. Phys.

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As the feature size of the device decreases, the critical charge decreases gradually and the influence of radiation particles becomes more and more serious, especially the single event upset (SEU). Some previously unknown radiation damage began to appear as the size of the device decreased. Low energy protons undergoing direct ionization can induce SEU in 65 nm static random access memories (SRAM), and muons can induce errors as a function of incident muon energy. In this work, the radiation damage caused by X-ray to the 45 nm SRAM is studied through experiments. The sensitive volume of SRAM is constructed using Monte Carlo radiation transport code Geant4 to analyze the effects of critical charge and metal interconnect overlayers of different materials. The experimental results suggested that under the low power state, the secondary electrons produced by the X-ray can induce upsets, lower the voltage, and increase the number of errors. Monte Carlo simulation shows that as the critical charge decreased, SEU becomes more severe. At the same time, photons interact with high atomic number materials in the metal interconnect overlayers, which could generate more secondary electrons resulting in the SEU cross section rising to a higher value.

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“…The calculations of the energy response characteristics of a RadFET radiation detector were performed via Monte Carlo simulations using the MCNPX code [4]. For a limited number of incident photon energies and only for the 'capped' configuration of the device, the FOTELP code [2,5] was also used for the sake of comparison. Energy response function of the RadFET should be calculated, as well as the influence of its kovar cap be investigated.…”

Section: Introductionmentioning

confidence: 99%

“…With atomic data, the electron and positron Monte Carlo simulation is broadened to treat atomic ion relaxation after photoeffect and impact ionization. [2,7] The geometry of the RadFET was modeled as a simple stack of appropriate materials. Our goal was to obtain results with statistical uncertainties better than 1% (fulfilled in MCNPX calculations for all incident energies except 1.1 and 1.5 MeV) which resulted in simulations with 1 -2×10 9 histories.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo calculation of the energy response characteristics of a RadFET radiation detector

Beličev

Jokic

Mayer

et al. 2010

J. Phys.: Conf. Ser.

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Transistor (MOSFET, RadFET) is frequently used as a sensor of ionizing radiation in nuclear-medicine, diagnostic-radiology, radiotherapy quality-assurance and in the nuclear and space industries. We focused our investigations on calculating the energy response of a p-type RadFET to low-energy photons in range from 12 keV to 2 MeV and on understanding the influence of uncertainties in the composition and geometry of the device in calculating the energy response function. All results were normalized to unit air kerma incident on the RadFET for incident photon energy of 1.1 MeV. The calculations of the energy response characteristics of a RadFET radiation detector were performed via Monte Carlo simulations using the MCNPX code and for a limited number of incident photon energies the FOTELP code was also used for the sake of comparison. The geometry of the RadFET was modeled as a simple stack of appropriate materials. Our goal was to obtain results with statistical uncertainties better than 1% (fulfilled in MCNPX calculations for all incident energies which resulted in simulations with 1 -2×10 9 histories.

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Computer Simulation of Gamma Irradiation Energy Deposition in MOSFET Dosimeters

Cited by 8 publications

References 14 publications

Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo

Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo

Research of X-ray induced single event soft errors in 45 nm SRAM

Monte Carlo calculation of the energy response characteristics of a RadFET radiation detector

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