Computer simulation of multifinger heterojunction bipolar transistor with self-heating and thermal coupling models

Huang, Kuen Yu; Li, Yiming; Lee, C.-P

doi:10.1016/j.mee.2004.03.083

Cited by 3 publications

(1 citation statement)

References 16 publications

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“…High‐performance heterojunction bipolar transistors (HBTs) for wireless portable communication have shown significant progress in recent years , and the interests in the wideband code division multiple access system are growing rapidly. Minimizing the dimension of HBTs for power‐amplification (PA) applications is indispensable to state‐of‐the‐art multi‐band cellular phones.…”

Section: Introductionmentioning

confidence: 99%

Thermal performance of nanoscale InGaP/GaAs collector‐up heterojunction bipolar transistors investigated by the advanced optimization technique

Tseng

2013

Int J Numerical Modelling

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The effects of thermal-dissipation structure on the thermal performance of nanoscale InGaP/GaAs collector-up heterojunction bipolar transistors were investigated by using the advanced hybrid optimization technique, a combination of the three-dimensional finite-element method for temperature-distribution analysis and the technology computer-aided design tool for power-performance evaluation. Through adequately locating the thermal-dissipation structure at the rear side of the transistor and via effective thickness-thinning procedures, which reduce foundry cost, the thermal coupling between collector fingers has been greatly ameliorated and a power-added efficiency of 45% is achieved.

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Section: Introductionmentioning

confidence: 99%

Thermal performance of nanoscale InGaP/GaAs collector‐up heterojunction bipolar transistors investigated by the advanced optimization technique

Tseng

2013

Int J Numerical Modelling

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An automatic parameter extraction technique for advanced CMOS device modeling using genetic algorithm

2007

Microelectronic Engineering

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Thermoreflectance imaging of current dynamics in high power SiGe heterojunction bipolar transistors

Chan

Pipe

Qin

et al. 2006

Applied Physics Letters

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By generating high resolution two dimensional temperature images of electronic devices and linking heat dissipation to electrical current, the authors demonstrate that thermoreflectance measurements employing a charge-coupled device can provide a useful and nondestructive method for profiling current density in electronic devices. Here they apply this method to high power SiGe heterojunction bipolar transistors (HBTs) integrated in a commercial SiGe bipolar complementary metal-oxide-semiconductor platform, measuring the current carried by each subcell and quantifying current collapse under high-bias operation. They show that current hogging for a HBT with two emitter subcells can lead to one subcell carrying 81% of the total current.

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Computer simulation of multifinger heterojunction bipolar transistor with self-heating and thermal coupling models

Cited by 3 publications

References 16 publications

Thermal performance of nanoscale InGaP/GaAs collector‐up heterojunction bipolar transistors investigated by the advanced optimization technique

Thermal performance of nanoscale InGaP/GaAs collector‐up heterojunction bipolar transistors investigated by the advanced optimization technique

An automatic parameter extraction technique for advanced CMOS device modeling using genetic algorithm

Thermoreflectance imaging of current dynamics in high power SiGe heterojunction bipolar transistors

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