The effects of thermal-dissipation structure on the thermal performance of nanoscale InGaP/GaAs collector-up heterojunction bipolar transistors were investigated by using the advanced hybrid optimization technique, a combination of the three-dimensional finite-element method for temperature-distribution analysis and the technology computer-aided design tool for power-performance evaluation. Through adequately locating the thermal-dissipation structure at the rear side of the transistor and via effective thickness-thinning procedures, which reduce foundry cost, the thermal coupling between collector fingers has been greatly ameliorated and a power-added efficiency of 45% is achieved.

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