Computer simulation study of the effect of semiconductor deep bulk levels on the capacitance-voltage characteristics of InSb MIS structures

Germanova, K.; Valcheva, E.

doi:10.1051/rphysap:01987002209098500

Rev. Phys. Appl. (Paris)

1987

DOI: 10.1051/rphysap:01987002209098500

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Computer simulation study of the effect of semiconductor deep bulk levels on the capacitance-voltage characteristics of InSb MIS structures

K. Germanova

E. Valcheva

Abstract: 2014 Dans cet article, on étudie l'influence des niveaux profonds en volume sur les propriétés de la couche de charge d'espace dans les structures MIS InSb.

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Cited by 4 publications

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A DLTS Study of InAs MIS Structures

Salman¹,

Korshunov²,

Vertoprakhov³

1990

phys. stat. sol. (a)

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Deep level transient spectroscopy (DLTS), capacitance–voltage (C–U) measurement, and thermally stimulated polarization current (TSPC) methods are used to study InAs MIS‐structures in the temperature region from 5 to 400K. It is found that above 200K the measured DLTS signal is caused by charge accumulation in the insulator layer. The parameters of two electrically active defect centers in the semiconductor space charge region (SCR) Ec – 0.06 eV and Ec – (0.15–0.20) eV are determined. These levelsapear in the energy spectrum of the interface states density as two separate peaks. The DLTS data are complemented by and compared with the C–U data.

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A DLTS Study of InAs MIS Structures

Salman¹,

Korshunov²,

Vertoprakhov³

1990

phys. stat. sol. (a)

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A DLTS study of InAs mis structures

Salman¹,

Korshunov²,

Vertoprakhov³

1989

Applied Surface Science

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III-V detector technologies at Sofradir: Dealing with image quality

Nedelcu

Bonvalot

Taalat

et al. 2018

Infrared Physics & Technology

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Computer simulation study of the effect of semiconductor deep bulk levels on the capacitance-voltage characteristics of InSb MIS structures

Abstract: 2014 Dans cet article, on étudie l'influence des niveaux profonds en volume sur les propriétés de la couche de charge d'espace dans les structures MIS InSb.

Cited by 4 publications

References 7 publications

A DLTS Study of InAs MIS Structures

A DLTS Study of InAs MIS Structures

A DLTS study of InAs mis structures

III-V detector technologies at Sofradir: Dealing with image quality

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