No abstract

Deep level transient spectroscopy (DLTS), capacitance–voltage (C–U) measurement, and thermally stimulated polarization current (TSPC) methods are used to study InAs MIS‐structures in the temperature region from 5 to 400K. It is found that above 200K the measured DLTS signal is caused by charge accumulation in the insulator layer. The parameters of two electrically active defect centers in the semiconductor space charge region (SCR) Ec – 0.06 eV and Ec – (0.15–0.20) eV are determined. These levelsapear in the energy spectrum of the interface states density as two separate peaks. The DLTS data are complemented by and compared with the C–U data.

No abstract

The ionic currents in thermally grown silicon dioxide films (PSD) between polysilicon (PS) are investigated by thermally stimulated polarization (TSPC) and depolarization (TSDC) currents and triangular voltage sweep (TVS) techniques. A mixture of dry oxygen and HCl (0, 4, 6, and 8 vol%) is used for oxidation. It is found that the ionic charge is situated near both the PS–PSD interfaces on ionic traps. The influence of electric field strength, oxidation time, and oxidation atmosphere is established. The results are discussed using the PS–PSD interface roughness model.

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