Preparation of thin copper films from the vapour phase of volatile copper(I) and copper(II) derivatives by the CVD method

Synthesis and Characterisation of the First Oxazoline Coordination Compounds Containing the Cu(F6acac)2 Unit: X-ray Diffraction Studies of Cu(kappa2-O,O'-F6acac)2(kappa1-N-Meox) and Cu(kappa2-O,O'-F6acac)2(kappa1-N-Etox)

“…[13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][33][34][35] As expected, the complexes reported herein contain chelating κ 2 -O,O'-bonded F 6 acac formally anionic groups with Cu-O bond lengths which are of the typical range (1.9-2.2 Å). The oxazoline ligand, predictably N-bonded, 4,5,[7][8][9][10][11][12]31 occupies a basal position with one of the F 6 acac O-atoms occupying the formal equatorial position of an idealised square pyramidal ligand arrangement.…”

“…This copper containing starting material has been extensively studied in coordination chemistry and materials science due to its ability to coordinate a variety of N-donor ligands which includes organic radicals, heterocycles, primary amines, etc. A wide variety of structural bonding motifs [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30] have been observed in the resulting coordination compounds. …”

Thermal‐ and Plasma‐Enhanced Copper Film Deposition via a Combined Synthesis‐Transport CVD Technique

“…MOCVD is a specific type of CVD that utilizes metal‐organic precursors. Common precursors of copper include β ‐diketonates (Cu(acac) 2 , Cu(HFA) 2 , Cu(DPM) 2 , and its derivatives), chelates, carboxilate complexes of copper, etc . Many of these compounds could be suitable for CVD processes.…”

Synthesis, spectral and electrochemical studies of Cu(II) and Ni(II) complexes with new N2O2 ligands: A new precursor capable of depositing copper nanoparticles using thermal reduction

“…Great attention has been paid to metal nanoparticles with extremely small dimensions. Copper-based metallization has been introduced into leadingedge microelectronic industries because of its promising physical properties, such as lower resistivity, improved electromigration resistance, and increased resistance to stress induced formation of voids caused by a higher melting point for copper [10][11][12][13]. Copper organometallic compounds have been evaluated as CVD precursors [14][15][16][17][18][19][20][21][22][23].…”