Concealed weapon identification using terahertz imaging sensors

Jacobs, Eddie L.; Moyer, Steve; Franck, Charmaine C.; DeLucia, Frank C.; Casto, Corey; Petkie, Douglas T.; Murrill, Steven R.; Halford, Carl E.

doi:10.1117/12.666597

Cited by 21 publications

(16 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For example, the subject's neck is virtually invisible, and his torso is poorly contrasted to the background. These observations are quite similar to those reported in [9], where a person was imaged using an active but non-ranging 640 GHz imager. However, unlike in [9], the concealed handgun in Fig.…”

Section: Concealed Weapons Detectionsupporting

confidence: 88%

See 1 more Smart Citation

Penetrating 3-D Imaging at 4- and 25-m Range Using a Submillimeter-Wave Radar

Cooper

Dengler

Llombart

et al. 2008

IEEE Trans. Microwave Theory Techn.

320

136

View full text Add to dashboard Cite

Abstract-We show experimentally that a high-resolution imaging radar operating at 576-605 GHz is capable of detecting weapons concealed by clothing at standoff ranges of 4-25 m. We also demonstrate the critical advantage of 3-D image reconstruction for visualizing hidden objects using active-illumination coherent terahertz imaging. The present system can image a torso with 1 cm resolution at 4 m standoff in about five minutes. Greater standoff distances and much higher frame rates should be achievable by capitalizing on the bandwidth, output power, and compactness of solid state Schottky-diode based terahertz mixers and multiplied sources.

show abstract

Section: Concealed Weapons Detectionsupporting

confidence: 88%

“…These observations are quite similar to those reported in [9], where a person was imaged using an active but non-ranging 640 GHz imager. However, unlike in [9], the concealed handgun in Fig. 4(b) cannot be seen, aside from a slightly higher region of reflectivity near the chest.…”

Section: Concealed Weapons Detectionsupporting

confidence: 88%

Penetrating 3-D Imaging at 4- and 25-m Range Using a Submillimeter-Wave Radar

Cooper

Dengler

Llombart

et al. 2008

IEEE Trans. Microwave Theory Techn.

320

136

View full text Add to dashboard Cite

show abstract

“…One of our objectives is to perform materials diagnostics, both in transmission and reflection, at various frequencies in the 1 -5 THz range. Many works have been conducted about THz imaging of various objects or materials hidden behind or into different materials: plastics in powdered sugar [1], weapon behind clothes [2], ink inside an envelope [3] are some well known examples. As we know, composite materials diagnostic with the help of THz waves has not yet been investigated.…”

Section: Introductionmentioning

confidence: 99%

THz QCL-based active imaging applied to composite materials diagnostic

Destic

Petitjean

Mollier

et al. 2009

2009 34th International Conference on Infrared, Millimeter, and Terahertz Waves

View full text Add to dashboard Cite

show abstract

“…A major problem in detector design using BiCMOS technology is the inherent noise 6,9 that the detector exhibits in comparison to CCD detectors, which is shown in Eqs. (1) and (2).…”

Section: Introductionmentioning

confidence: 99%

Dynamic range and sensitivity improvement in near-infrared detectors using silicon germanium bipolar complementary metal-oxide semiconductor technology

Venter

Sinha

2013

Opt. Eng

View full text Add to dashboard Cite

Abstract. Classically gated infrared (IR) detectors have been implemented using charge-coupled devices (CCD). Bipolar complementary metal-oxide semiconductor (BiCMOS) technology emerged as a viable alternative platform for development. BiCMOS technology has a number of advantages over CCD and conventional CMOS technology, of which increased switching speed is one. The pixel topology used in this work is a reversed-biased diode connected heterojunction bipolar transistor. The disadvantage of CMOS detectors is the increased readout noise due to the increased on-chip switching compared to CCD, which degrades dynamic range (DR) and sensitivity. This yields increased switching speeds compared to conventional bipolar junction transistors. Sensitivity improved from 50 mA∕W (peak) at 430 nm in CCD detectors to 180 mA∕W (peak) (or 180; 000 V∕W) at 665 nm in BiCMOS detectors. Other CMOS IR detectors previously published in the literature showed sensitivity values from 2750 to 5000 V∕W or 100 mA∕W. The DR also improved from 47 and 53 dB to 70 dB. The sensitivity of conventional CCD detectors previously published is around 53 mA∕W. The second advantage is that detection in the near-IR band with conventional silicon integrated technology is possible. This work has shown increased detection capabilities up to 1.1 μm compared to Si detectors.

show abstract

Concealed weapon identification using terahertz imaging sensors

Cited by 21 publications

References 5 publications

Penetrating 3-D Imaging at 4- and 25-m Range Using a Submillimeter-Wave Radar

Penetrating 3-D Imaging at 4- and 25-m Range Using a Submillimeter-Wave Radar

THz QCL-based active imaging applied to composite materials diagnostic

Dynamic range and sensitivity improvement in near-infrared detectors using silicon germanium bipolar complementary metal-oxide semiconductor technology

Contact Info

Product

Resources

About