Concentration and temperature-dependent low-field mobility model for In0.53Ga0.47As interdigitated lateral pin PD

Abstract

Abstract:The fitted parameters for the analytic function used to specify doping-and temperature-dependent low-field mobilities for In 0.53 Ga 0.47 As is described in this paper. The developed model was compared with other mobility models as well as measured Hall data from periodical literature and very good agreement is observed. The result of this work was used to develop an In 0.53 Ga 0.47 As interdigitated lateral p-i-n photodiode (ILPP) model and good correlation was obtained when compared with the experimentally developed device. The results of this work would be useful in the development of In 0.53 Ga 0.47 As-based devices using commercial device simulation packages. Keywords: mobility, In 0.53 Ga 0.47 As, p-i-n, photodiode, lateral, interdigitated Classification: Photonics devices, circuits, and systems [2] D. M. Caughey and R. E. Thomas, "Carrier mobilities in silicon empirically related to doping and field," Proc. IEEE, vol. 55, no. 12, pp. 2192-2193, Dec. 1967 S. Datta, S. Shi, K. P. Roenker, M. M. Cahay, and W. E. Stanchina, "Simulation and design of InAlAs/InGaAs pnp heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 45, no. 8, pp. 1634-1643, Aug. 1998field mobility model for III-V compounds applicable in device simulation codes," J. Appl. Phys., vol. 87, no. 6, pp. 2890-2900, March 2000 N. D. Arora, J. R. Hauser, and R. J. Roulstan, "Electron and hole mobilities in silicon as a function of concentration and temperature," IEEE Trans. References

Modeling and Optimization of Three-Dimensional Interdigitated Lateral p-i-n Photodiodes Based on In0.53Ga0.47As Absorbers for Optical Communications

“…4(d) shows the electron mobility as a function of temperature in InGaAs where calculated electron mobility from this work is compared to the experimental Hall data from Takeda et al (1981). A very good agreement is obtained for temperatures >150K (Menon et al, 2008a). Lee et al 1991 This work (77K) Sotoodeh et al 2000Arora et al 1982Pearsall 1981Ohtsuka et al 1988 1.E+02 Takeda et al 1981 This work The hole mobilities for InP-based material are similar to those seen for GaAs and AlGaAs (Datta et al, 1998).…”

“…Curve fitting methodology using MATLAB was used to obtain parameters of empirical equations used to derive the minority carrier lifetime and the carrier mobility. The developed model was characterized for its responsivity, -3dB frequency, I-V, C-V and the signal-to-noise ratio (SNR) (Menon, 2008;Menon et al,2008a;Menon et al, 2008b;Menon et al 2009, Menon et al 2010). …”

“…The fitting parameters are alphan. caug, alphap.caug, betan.caug, betap.caug, gamman.caug, gammap.caug, deltan.caug and deltap.caug whereas ncritn.caug and ncritp.caug are the critical doping densities (cm -3 ) for electrons and holes, respectively above which ionized impurity scattering becomes dominant (Menon et al, 2008a). The mobility data has been fit to Eqs.…”

Concentration‐dependent minority carrier lifetime in an In0.53Ga0.47As interdigitated lateral PIN photodiode model based on spin‐on chemical fabrication methodology

“…The fitting parameters for the concentration‐ and temperature‐dependent carrier mobility model have been described elsewhere 31. The negative differential mobility model of Barnes et al .…”

Design of Low-Loss Surface-Plasmon Quantum Cascade Lasers

“…1(a) are in good agreement with results obtained by Kane's model. 16) The electron mobility n for InGaAs at 300 K is estimated with low-field mobility model, 17,18) ranging from 2000 to 4000 cm 2 V À1 s À1 for doping concentration above 3  10 18 cm À3 . The value for is estimated to be 0.06 -0.11 ps, where classical relation ¼ m à n =e is used.…”