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The detailed study of random telegraph signal (RTS) currents and low-frequency (LF) noise in semiconductor devices in recent years has confirmed their cause and effect relationship. In this paper we describe the physical mechanisms responsible for RTS currents in any device. The methods for calculating the amplitudes and characteristic times of the RTS currents produced by traps with known electrical characteristics and locations are described. The noise spectra in jonction field effect transistors (JFET's) resulting from traps in the silicon or the oxide are derived as a function of basic device parameters, operating conditions and temperature. Experimental results verifying the predictions of the models are presented. K. Kandiah was born in Jaffna, Ceylon (Sri Lanka), in 1916. He received the B.Sc. degree from University of London in 1937 and the M.A. degree from University of Cambridge in 1941. He designed instruments for nuclear physics research from 1941 to 1945 in Cavendish Laboratory, Cambridge, and continued these activities in the Atomic Energy Research Establishment at Harwell, UK, until 1981. He is now a consultant to the Rutherford Appleton Laboratory on device noise and radiation detectors. His main interests are modeling and physics of devices.

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