Random telegraph signal currents and low-frequency noise in junction field effect transistors

Abstract

The detailed study of random telegraph signal (RTS) currents and low-frequency (LF) noise in semiconductor devices in recent years has confirmed their cause and effect relationship. In this paper we describe the physical mechanisms responsible for RTS currents in any device. The methods for calculating the amplitudes and characteristic times of the RTS currents produced by traps with known electrical characteristics and locations are described. The noise spectra in jonction field effect transistors (JFET's) resulting from traps in the silicon or the oxide are derived as a function of basic device parameters, operating conditions and temperature. Experimental results verifying the predictions of the models are presented. K. Kandiah was born in Jaffna, Ceylon (Sri Lanka), in 1916. He received the B.Sc. degree from University of London in 1937 and the M.A. degree from University of Cambridge in 1941. He designed instruments for nuclear physics research from 1941 to 1945 in Cavendish Laboratory, Cambridge, and continued these activities in the Atomic Energy Research Establishment at Harwell, UK, until 1981. He is now a consultant to the Rutherford Appleton Laboratory on device noise and radiation detectors. His main interests are modeling and physics of devices.

Development and Applications of a New Deep Level Transient Spectroscopy Method and New Averaging Techniques

“…This high sensitivity was demonstrated for both MOSFETs Cl171 and F E T s [106]. Our best resdts are in the range of 20 to 30 detected traps.…”

Influence of surface states on the reverse and noise properties of silicon power diodes

“…Time constants t 1 and t 2 are also different for the annealing process (about 1 h) and for the on-state polarisation (about 4 h). The previous relations (6) and 7 www.ietdl.org formed a symmetrical structure p + nn + , where p-n junction depths are about 55-60 μm, Si-wafer thickness is 370 μm and surface densities of n + and n + excess 10 20 cm -3 . After diffusions, both sides of Si-wafer were covered by a thin Ni-layer and circular chips (of a 5 mm diameter) were prepared by a mechanical process.…”

“…This noise process is therefore practically managed by filling and emptying the traps and by their densities. A typical curve of this noise signal is described as the ‘random telegraph signal’ (RTS) [6]. The current in the semi‐conductor bulk changes randomly between two discreet values which are approximately constant.…”

Effects of bias cooling on charge states in heterostructures embedding self-assembled quantum dots

“…The noise is temperature dependent and can be eliminated above 130 K. Over the last several decades the physical mechanisms behind the noise, especially the lowfrequency noise in semiconductor devices, have been broadly investigated. [19][20][21][22][23] One of the common features in the experimental data reported in the literature proposes that noise is closely related to the charge traps in the structures. The existence of the noise in our control sample without QDs under the same bias-cooling conditions suggests that the observed noise may be associated with the DX centers localized in the ␦-doped AlGaAs layer rather than the deep levels coexisting with the dots.…”