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This article deals with a description and analysis of the fast transient processes

An investigation of the boundary states of power semiconductor devices is important with respect to their function reliability. Focus of this article is based on the evaluation of transient temperature increasing of pn-junction under its reverse bias. An influence of positive feedback (heating by some reverse current) is considered on time stability of this reverse current at constant reverse voltage. The temperature is determined which is limiting transiently the reliable function of devices. The problem is solved by two ways. First of them is based on a physical model design describing the heat generation and conduction in semiconductor structure. The second way uses electrical circuit simulation for study of the same structure. Conclusions of both models are applied to collection of experimental data. q

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Electrical capacity of power semiconductor devices is quite an important parameter that can be utilized not only for testing a component itself, but it can also be applied practically; e.g. in series-connected high voltage devices. This paper first analyzes the theoretical voltage distribution on the bases of the polarized p-n junction, as well as the size of capacity. The measurement of the voltage-capacity dependence using the resonance principle is illustrated on the samples of 4kV and 6kV thyristors. The correspondence between theoretical estimation of the capacity, measured voltage capacity dependence based on the resonance principle and experimentally determined by injected charge proves the correctness of the applied procedures and assumptions.