Transient effects on high voltage diode stack under reverse bias

Papež, Václav; Kojecký, B.; Kozisek, J.; Hejhal, J.

doi:10.1016/s0026-2714(03)00028-3

Cited by 2 publications

(3 citation statements)

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“…On the contrary, catching the holes during an on-state polarisation and their consequent emission leads to the transient increase of leakage current. Since noise power P N is proportional to the square root of the flowing leakage current, then with respect to (1), (2) and their combination, we receive two equations for the restoration process. Equation (6) describes the restoration after an annealing process (P N1 ); (7) describes the restoration after an on-state polarisation (P N2 ).…”

Section: Physical Modelmentioning

confidence: 99%

“…This second group of the diodes is most frequently used in industrial welding machines with an important requirement on a long time reliability and lifetime in difficult operating conditions. A simple physical model describing the origin, behaviour and kinetics of the defects located on a p-n junction termination was published in former studies [1,2]. There was demonstrated the inherent relation between the presence of SSS, degradation of a reverse voltage and a flicker noise power.…”

Section: Introductionmentioning

confidence: 99%

“…A simple physical model describing the origin, behaviour and kinetics of the defects located on a p ‐ n junction termination was published in former studies [1, 2]. There was demonstrated the inherent relation between the presence of SSS, degradation of a reverse voltage and a flicker noise power.…”

Section: Introductionmentioning

confidence: 99%

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Influence of surface states on the reverse and noise properties of silicon power diodes

Papež

Hájek

Kojecký

2014

IET Circuits, Devices & Systems

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This contribution investigates transient degradation of reverse characteristics of diodes by means of a noise measurement. This effect appears immediately after external heating or after a long time on-state polarisation of diodes (without a significant temperature growth of the device in this case). Simultaneously with the reverse characteristics degradation, the noise power measured under a low voltage DC reverse bias is influenced. The first possible cause of these effects is connected with so called slow surface states (SSS). The SSS are caused by the presence of material process induced defects in the region of a p-n junction surface termination. SSS have fundamental impact on the reverse properties of diodes and their low frequency noise behaviour. The second cause is connected with so called volume structural defects (VSD). Their origin can be 'genetic' (e.g. the presence of imperfection inside a silicon crystal) or they can be induced during technological processing. These defects are not repairable and under the reverse bias they will form so called 'hot spots' that is, places with a local high current density. Rapid and operative measurements of the noise power can reveal latent instabilities of reverse characteristics invisible during a standard inspection process during the production.

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Section: Physical Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%