2014
DOI: 10.1049/iet-cds.2013.0219
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Influence of surface states on the reverse and noise properties of silicon power diodes

Abstract: This contribution investigates transient degradation of reverse characteristics of diodes by means of a noise measurement. This effect appears immediately after external heating or after a long time on-state polarisation of diodes (without a significant temperature growth of the device in this case). Simultaneously with the reverse characteristics degradation, the noise power measured under a low voltage DC reverse bias is influenced. The first possible cause of these effects is connected with so called slow s… Show more

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