A physical model for random telegraph signal currents in semiconductor devices

Abstract

Articles you may be interested inExamination of the application of multiphonon models to the random telegraph signal noise in metal-oxidesemiconductor structures A percolation model for random telegraph signals in metal-oxide-silicon field effect transistor drain current Appl. Phys. Lett. 93, 043517 (2008); 10.1063/1.2966157 Modeling random telegraph signals in the gate current of metal-oxide-semiconductor field effect transistors after oxide breakdown J. Appl. Phys. 94, 703 (2003); 10.1063/1.1579134Observation and modeling of random telegraph signals in the gate and drain currents of tunneling metal-oxide-semiconductor field-effect transistors

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

“…An example of the relevance of RTN is shown in Figure 4, where results obtained on a selected decananometer Flash cell are reported [91]: current fluctuations up to 60% were detected, which cannot be explained with the above theory. Though early explanations pointed to multiple carrier emissions [88,89], change in defect properties [87] or interacting quantum wells [82], a different approach based on the percolative nature of the current conduction around the charged trap site had been mentioned in [100] and thoroughly revisited in [101], exploiting a concept applied to amorphous semiconductors [102]. The authors pointed out that no uniform conduction in a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) channel could account for the anomalous RTN amplitudes.…”

Burst noise in the HAWAII-1RG multiplexer

“…2,[5][6][7]10 In these reports, authors concentrate almost exclusively on two-level burst noise (sometimes referred to as a bistable waveform), indicating a single mechanism for the majority of devices exhibiting the phenomenon. To further investigate this noise source, assuming the source follower unit cell FET was the origin, a testing method was devised to prevent the HgCdTe diodes from contributing to the noise.…”

“…[1][2][3][4][5][6][7] It is characterized by rapid current level shifts in both positive and negative directions and can have varying magnitudes. To cause burst noise, the generation or recombination in a single defect or trap either modifies the conductivity of a constrained current channel or reduces the energy barrier between two regions, enabling carriers to tunnel through the barrier more readily.…”

Microwave irradiation effects on random telegraph signal in a MOSFET

“…The Random Telegraph Signal (RTS), observed as a random switching between two states of the channel current in a metal-oxide-semiconductor field effect transistor (MOSFET) [1,2,3,4], has been considered as a possible quantum readout mechanism by Vrijen et al [5] and has been used for detecting single electron spin resonance. [6] The spin resonance detection requires the irradiation by a microwave field of a defect at the Si/SiO 2 interface of a MOSFET in presence of a static magnetic field.…”

“…The RTS experimental data are in agreement with the prediction obtained with the model, making use of the voltage data measured with the independent dc microwave induced current. We conclude that when operating a MOSFET under microwave irradiation, as in single spin resonance detection, one has to pay attention into the effects related to microwave irradiation dependent RTS changes.The Random Telegraph Signal (RTS), observed as a random switching between two states of the channel current in a metal-oxide-semiconductor field effect transistor (MOSFET) [1,2,3,4], has been considered as a possible quantum readout mechanism by Vrijen et al [5] and has been used for detecting single electron spin resonance.[6] The spin resonance detection requires the irradiation by a microwave field of a defect at the Si/SiO 2 interface of a MOSFET in presence of a static magnetic field. [7,8] The capture λ c and emission λ e rates due to the tunneling of electrons assisted by multiphonon non radiative processes depend on the energy levels of the trap with respect to the Fermi energy of the electron channel.…”