Articles you may be interested inExamination of the application of multiphonon models to the random telegraph signal noise in metal-oxidesemiconductor structures A percolation model for random telegraph signals in metal-oxide-silicon field effect transistor drain current Appl. Phys. Lett. 93, 043517 (2008); 10.1063/1.2966157 Modeling random telegraph signals in the gate current of metal-oxide-semiconductor field effect transistors after oxide breakdown J. Appl. Phys. 94, 703 (2003); 10.1063/1.1579134Observation and modeling of random telegraph signals in the gate and drain currents of tunneling metal-oxide-semiconductor field-effect transistors

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