Concentration-control in all-solution processed semiconducting polymer doping and high conductivity performances

Abstract

Simultaneously optimizing performances, processability and fabrication cost of organic electronic materials is the continual source of compromise hindering the development of disruptive applications. In this work, we identified a strategy to achieve record conductivity values of one of the most benchmarked semiconducting polymers by doping with an entirely solution-processed, water-free and cost-effective technique. High electrical conductivity for poly(3-hexylthiophene) up to 21 S/cm has been achieved, using a commercially available electron acceptor as both a Lewis acid and an oxidizing agent. While we managed water-free solution-processing a three-time higher conductivity for P3HT with a very affordable/available chemical, near-field microscopy reveals the existence of concentrationdependent higher-conductivity micro-domains for which furthermore process optimization might access to even higher performances. In the perpetual quest of reaching higher performances for organic electronics, this work shall greatly unlock applications maturation requiring higher-scale processability and lower fabrication costs concomitant of higher performances and new functionalities, in the current context where understanding the doping mechanism of such class of materials remains of the greatest interest.

Analog programing of conducting-polymer dendritic interconnections and control of their morphology

“…Electrical tests show conductivity at the order of 0.1-1 S/cm (Supplementary Fig. 1), only 3-fold lower than optimized PEDOT:PSS dispersions 24 , and equals other highly doped polythiophenes' 27 . This evidences the presence of PSS − into the ePEDOT matrix as dopant.…”

p-Type molecular doping by charge transfer in halide perovskite

“…To achieve this goal, our understanding of the chemical and physical processes involved in the solution, during crystallization and in the final film must be improved. Additionally, we can expect to face impediments already encountered in organic semiconductor doping, including the formation of aggregates, [43][44][45][46][47][48] instability, 36,[49][50][51][52] or limited doping efficiency. [53][54][55] The latter issue is usually overcome with large concentrations of dopant (few %), which however can negatively impact the film morphology and could be particularly detrimental for crystalline halide perovskites, as observed in the present study for 5% doped MAPb 0.5 Sn 0.5 I 3 .…”

Organic doped diode rectifier based on parylene-electronic beam lithogrpahy process for radio frequency applications

“…In order to enhance charge injection in diode rectifier based P3HT, we have used a hole injection layer of p-doped P3HT with a thickness of 40 nm that we assessed the concentrationdependent conductivity previously [27]. A series of solution were prepared containing different molar fraction ratio of dopant.…”

“…Different injection layers have been reported in literature in case of organic diode rectifiers such as PEDOT: PSS [14,24], MoO3 [16,25], WO3 [26]. In this report, we use a new hole injection layer for P3HT diode rectifier, that we have developed recently [27] as a new pdoped layer for P3HT that leads to high electrical conductivity.…”