Organic doped diode rectifier based on parylene-electronic beam lithogrpahy process for radio frequency applications

Abstract

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High Rectification Ratio in Polymer Diode Rectifier through Interface Engineering with Self-Assembled Monolayer

“…As it has been reported in the literature [32,44,45], the adsorption of PFBT monolayer on gold surface leads to interface dipole layers oriented downward to the metal substrate. Consequently, the work-function of gold increases that value to about 5.1 eV compared to 4.56 eV for untreated gold [43]. From the energy band diagram in Figure 2c, we can see that without PFBT modification, the barrier hole injection has a value of 0.34 eV, and decreases to 0.2 eV with the PFBT, (the value of HOMO and lowest unoccupied molecular orbital (LUMO) are taken from ref [18]).…”

“…The load capacitance value needs to be higher than the capacitance of the diode to reduce the output voltage ripples [48], a value of 10 nF was chosen in our case. The parameters of the diode used in simulation are extracted experimentally by impedance spectroscopy measurements [43]. The obtained values for the electrical equivalent circuit of the diode are C D = 174 pF (diode capacitance) and R D = 120 Ω (for the series resistance).…”

“…Under a 500 kHz, 2 V peak-to-peak oscillating input signal, an output DC voltage of 1.51 V was obtained, value that decreases to reach a DC output voltage of 0.15 when the input frequency increases to 20 MHz which is compatible with RFID applications (13.56 MHz). For energy harvesting, the frequency response of the diode can be improved by optimizing the device structure with reducing the capacitance of the diode and its resistance [43].…”

Recent advances in doped organic field-effect transistors: mechanism, influencing factors, materials, and development directions

“…Organic semiconductors (OSCs) as the key materials meet the needs for low-cost large-area fabrication and have been used as the active layers of various organic electronic devices, such as organic field-effect transistors (OFETs), 1 organic photovoltaics (OPVs), [1][2][3] organic light-emitting devices (OLEDs), 1 organic electrochemical sensors (OECTs), 4 and organic thermoelectric devices (OTEs). [5][6][7][8][9][10][11] In the past few decades, many high-performance OSCs have been developed, and one of the focuses of research is the design and synthesis of OSCs with novel molecular structures. [12][13][14] Numerous OSCs have carrier mobilities of 1-10 cm 2 V À1 s À1 .…”

Nanoscale Channel Gate‐Tunable Diodes Obtained by Asymmetric Contact and Adhesion Lithography on Fluoropolymers

“…Lithography is a crucial process for manufacturing electronic devices. Various lithographic processes, such as photolithography, [1,2] e-beam lithography, [3] and direct writing, [4] can form defined patterns on which the charge transport behavior is modulated according to the device applications, including field-effect transistors, [5,6] diodes, [7,8] photodetectors, [9,10] gas sensors, [11][12][13] and memory devices. [14,15] Tremendous effort has been made in lithography techniques to shrink and shorten pattern lengths since short-channel devices offer a lower power consumption and higher driving current.…”