Concentration dependence of the electron diffusion length in p‐type GaAs

Abstract

The concentration dependence of the electron diffusion length in p-type GaAs is analyzed based on experiiiiental values reported in the literature and recent studies of minority carriers mobility in GaAs. The dependence of Ln with doping impurity concentration is determined for tllr > tr and good agreement is found with highest reported experimental values of Ln; considerations are rnatle about tnr. The dependence of electron mobility, diffusion constant, and radiative reconibination lifetime on concentration are also given.The importance of the knowledge of the values of the electron diffusion length in ptype GaAs is a well established fact.A

Minority carrier diffusion length, lifetime and mobility in p-type GaAs and GaInAs

“…Ga (1-x) In x As is a direct semiconductor and its diffusion length can therefore be on the order of micrometers. 9 There are several methods commonly adopted to determine such short diffusion lengths. Cross sectional electron beam induced current (EBIC) measurements are commonly performed.…”

Impact of lateral carrier confinement on electro-optical tuning properties of polariton condensates

“…In the micropillar sample, carriers accumulating in one quantum well due to tunneling are confined to the etched structure of the pillar with a radius that is on the order of diffusion lengths in intrinsic GaAs of tens of lm. 26 In the planar sample on the other hand, electrons spread out in the plane of the quantum well due to diffusion and Coulomb repulsion. Thus, the carrier density required for screening effects to become noticeable is reached at considerably larger nominal electric fields.…”