Concentration quenching in ND-doped glasses

Stokowski, S. E.; Cook, Lee M.; Mueller, H. W.; Weber, Marvin J.

doi:10.1016/0022-2313(84)90137-6

Cited by 8 publications

(3 citation statements)

References 2 publications

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“…migration of the excitation energy, as demonstrated in Nddoped phosphate glasses or silica glasses. 13,14 Moreover, a decrease of the PL intensity due to the solubility limit of Nd in SnO 2 cannot be rejected. The evolution of the PL spectra with the doping level is also correlated to the PL band at around 600 nm.…”

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Photoluminescence of Nd-doped SnO2 thin films

Rinnert

Miska

Vergnat

et al. 2012

Applied Physics Letters

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Structural, optical, and electrical properties of Nd-doped SnOx thin films are reported. The atomic structure was characterized by x-ray diffraction and infrared absorption spectrometry. Investigation of the photoluminescence properties revealed Nd-related bands at 920 and 1100 nm for samples annealed at 700 °C, which present the tetragonal structure of the SnO2 rutile phase. Nd3+ ions can be indirectly excited and no concentration quenching was observed up to 3 at. %. It is concluded that Nd3+ ions are efficient optically active dopants in addition to be responsible of the observed electric conductivity improvement. These materials are then interesting for solar cell applications.

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confidence: 99%

Photoluminescence of Nd-doped SnO2 thin films

Rinnert

Miska

Vergnat

et al. 2012

Applied Physics Letters

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“…6, the calculated oscillation by assuming Sm-Sm scattering shows a satisfactory agreement with the back-transformed oscillation. It can be concluded that, therefore, Sm atoms agglomerate and form oxide cluster at higher concentrations, which is the reason for the concentration quenching (15,16).…”

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“…Manuscript received Oct. 31, 1989. This was in part Paper 585 and Paper 586 presented at the Hollywood, FL, Meeting of the Society, Oct. [15][16][17][18][19][20] 1989.…”

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confidence: 99%

Enhancement of Fluorescent Intensity of a SiO2 : Sm Glass by Al Codoping and Local Structure around Sm by an EXAFS Study

Morimo

Mizushima

Udagawa

et al. 1990

J. Electrochem. Soc.

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A1 codoped SiO2:Sm phosphors were prepared by the alkoxide method, which starts from a hydrolysis of silicon ethoxide and the metal nitrates at low temperature and minimizes the contamination of impurities. An addition of A1 ions to SiO~:Sm is found to increase emission intensity from Sm ion more than an order of magnitude. EXAFS study revealed that local structures around Sm ions in the phosphors with and without dopant are significantly different; in the SiO2:Sm phosphor Sm atoms are well dispersed at low Sm concentrations and Sm atoms agglomerate at high concentrations, while in the A1 codoped phosphor Sm atoms are coordinated by A1 through Sm-O-A1 bonding. This provides a direct structural evidence of the role of the codopant. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 137.99.31.134 Downloaded on 2015-05-26 to IP

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