2013
DOI: 10.19026/rjaset.5.5105
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Concept of Recombination Velocity Sfcc at the Junction of a Bifacial Silicon Solar Cell, in Steady State, Initiating the Short-Circuit Condition

Abstract: The aim of this study is to present technics to determine the junction recombination velocity of a bifacial polycrystalline silicon solar cell under both, constant multispectral illumination and steady short-circuit condition.

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Cited by 18 publications
(20 citation statements)
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“…It can be also applied using characterization methods to determine the real back-side surface recombination (Sb) [21] and the effective diffusion length (L eff ) [22]. These techniques are valid in short-circuit open circuit operating condition.…”
Section: Resultsmentioning
confidence: 99%
“…It can be also applied using characterization methods to determine the real back-side surface recombination (Sb) [21] and the effective diffusion length (L eff ) [22]. These techniques are valid in short-circuit open circuit operating condition.…”
Section: Resultsmentioning
confidence: 99%
“…For the same conditions, when the grain size (g) increases, Sf 0,u and the shunt resistance decreases and increases, respectively. This situation corresponds to less recombination and the real operating point of the solar cell roll away of the initiating operating short-circuit condition studied in [16].…”
Section: Resultsmentioning
confidence: 95%
“…For a fixed external load, corresponding to a specific value of Sf j , Sf 0,u increases with the grain boundary recombination (Sgb). This leads to the lower shunt resistance (R sh ) and to the initiating short-circuit condition quickly reached [16]. For the same conditions, when the grain size (g) increases, Sf 0,u and the shunt resistance decreases and increases, respectively.…”
Section: Resultsmentioning
confidence: 95%
“…These recombination [1] parameters can be studied in static regime [2] [3] [4] or in dynamic regimes i.e. transient [5] [6] or frequency [7] [8] [9] [10].…”
Section: Introductionmentioning
confidence: 99%