Concurrent Phosphorus Doping and Reduction of Graphene Oxide

Abstract

Doped graphene materials are of huge importance because doping with electron-donating or electron-withdrawing groups can significantly change the electronic structure and impact the electronic and electrochemical properties of these materials. It is highly important to be able to produce these materials in large quantities for practical applications. The only method capable of large-scale production is the oxidative treatment of graphite to graphene oxide, followed by its consequent reduction. We describe a scalable method for a one-step doping of graphene with phosphorus, with a simultaneous reduction of graphene oxide. Such a method is able to introduce significant amount of dopant (3.65 at. %). Phosphorus-doped graphene is characterized in detail and shows important electronic and electrochemical properties. The electrical conductivity of phosphorus-doped graphene is much higher than that of undoped graphene, owing to a large concentration of free carriers. Such a graphene material is expected to find useful applications in electronic, energy storage, and sensing devices.

Dual doped monolayer and bilayer graphene: The case of 4p and 2p elements

“…boron [3][4][5] and nitrogen [6], elements with an atomic radii much larger have been successfully introduced in graphene. Moreover, some of them can be produced in large quantities, such as sulfur [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21], and phosphorus [7][8][9][17][18][19][20] doped graphene. On the other hand, to the best of our knowledge, the synthesis of Si doped graphene presents more difficulties, even though the presence of Si atoms in the basal plane of graphene has been confirmed [21,22].…”

Phosphorus-doped porous carbon derived from rice husk as anode for lithium ion batteries

“…It exhibits typical amorphous carbon structure with peaks at around 25° and 43° corresponding to the (002) and (100) planes of graphite. The density of defects has been identified as an important factor of improving the rate of reactions occurring on the surface of the material due to more electrochemical reaction sites39 , which can be expressed as the intensity ratio of the D band and G band (R = I d /I g ). The peak at around 57° is attributed to silica (PDF#89-3609), which is difficult to remove completely.Fig.…”

Heteroatom modified graphenes: electronic and electrochemical applications

“…28 It is possible to simultaneously reduce GO and dope with phosphorus via reuxing it with P 4 /KOH. 29 …”