Condition Monitoring of IGBT Modules Based on Changes of Thermal Characteristics

Wei, Kexin; Wang, Wenbai; Hu, Zhi Yi; Du, Mingxing

doi:10.1109/access.2019.2909928

Cited by 27 publications

(8 citation statements)

References 29 publications

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“…A more insightful method to track degradation in the thermal path is through the estimation of the structure function of the package [101][102][103][104][105][106][107][108][109]. Fig.…”

Section: ) Degradation Precursors Estimationmentioning

confidence: 99%

A Review on IGBT Module Failure Modes and Lifetime Testing

2021

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“…A more insightful method to track degradation in the thermal path is through the estimation of the structure function of the package [101][102][103][104][105][106][107][108][109]. Fig.…”

Section: ) Degradation Precursors Estimationmentioning

confidence: 99%

A Review on IGBT Module Failure Modes and Lifetime Testing

2021

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“…These PECs widely use the insulated gate bipolar transistors (IGBT) as power modules due to their availability, simple driver requirements, robust short circuit current capabilities, and relatively low cost. However, the intermittent nature of RPGs, environmental and thermal conditions, and varying electrical loading has prone the modules to excessive thermal and electrical stresses 1,2 . Considering these stresses, the modules are designed with the prerequisites to withstand high junction temperatures and thermal cycles, and achieve high reliability and improved lifetime 3 .…”

Section: Introductionmentioning

confidence: 99%

“…To protect the power modules from such catastrophic failures, and to identify the fault prior to its occurrence, a condition monitoring algorithm is needed 2,5 . These systems must be capable enough of effective monitoring for all ranges of power modules.…”

Section: Introductionmentioning

confidence: 99%

Condition monitoring of IGBT modules using online TSEPs and data‐driven approach

Kurukuru

Haque

Tripathi

et al. 2021

Int Trans Electr Energ Syst

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Summary The nonlinear operating characteristics associated with the power electronic converters result in high mechanical and thermal stresses for the power modules. These stresses collectively result in failure modes such as wear‐out and sudden failures, which lead to power loss for the system. To overcome these aspects, this paper proposes a condition monitoring approach based on data‐driven methods for power modules. The proposed approach is aimed at achieving early detection of power module failure mode by measuring the temperature sensitive electrical parameters (TSEPS) with a measurement and monitoring unit (MMU). To develop the proposed monitoring approach, 12 different online TSEPs of insulated gate bipolar transistor (IGBT) power module are measured with the MMU and trained with a support vector data descriptor classifier. The training process is carried out with a two‐chip half bridge IGBT leg which is further operated in a single‐phase full bridge inverter configuration during the testing process. Both the training and testing processes of the developed classifier are carried out for IGBT operation at multiple temperatures, and multiple faults to identify the repeatability of the TSEPs. The results of numerical simulations and experimental analysis identified 96.3% training accuracy and 2.9% error in testing accuracy at 90°C junction temperature for degradation identification. For the failure mode classification, the training accuracy is identified to be 98.6%, and 100% testing accuracy at 25°C.

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“…For some complex devices like integrated circuits and FPGA, it is impractical to design canaries due to its relatively large size and high cost, and there may be large prediction error by monitoring environmental and usage profiles due to their complex structure. Therefore, it has been increased interest in finding health indicators of complex devices [11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

A Health Indicator for Interconnect structure of QFP Package Under Vibration and Steady Temperature

Jing

Huang

et al. 2020

IEEE Access

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Interconnect structure, as the weak point of reliability, is often the critical part in electronic devices during their service. In order to monitor the health state and degradation of interconnect structure, the charging time is used as the health indicator for interconnect structure of QFP package in this paper. Firstly, a monitoring circuit, based on the proposed electrical model of interconnect structure, is designed to measure the charging time in real time. Secondly, the equivalent circuit of the monitoring circuit is derived and the effect of the parameters of the monitoring circuit on the charging time is analyzed. Then, experiments under vibration and steady temperature are conducted to analyze the failure of interconnect structure and derive the damage model. Finally, the effect of charging time as the health indicator to monitor the damage of interconnection structures is analyzed and the uncertainty is discussed. Results show that the charging time is directly related to the interconnect damage and can well characterize the interconnect failure, which can be used as a health indicator to assess the damage and predict the failure of interconnect structure.

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Condition Monitoring of IGBT Modules Based on Changes of Thermal Characteristics

Cited by 27 publications

References 29 publications

A Review on IGBT Module Failure Modes and Lifetime Testing

A Review on IGBT Module Failure Modes and Lifetime Testing

Condition monitoring of IGBT modules using online TSEPs and data‐driven approach

A Health Indicator for Interconnect structure of QFP Package Under Vibration and Steady Temperature

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