2016
DOI: 10.1039/c5ee02484f
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Conductance and capacitance of bilayer protective oxides for silicon water splitting anodes

Abstract: State-of-the-art silicon water splitting photoelectrochemical cells employ oxide protection layers that exhibit electrical conductance in between that of dielectric insulators and electronic conductors, optimizing both built-in field and conductivity.

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Cited by 44 publications
(75 citation statements)
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“…[18,27] This is a slow process ranging from hours to days. In addition, catalyst layers of 1 to 2 nm of thickness [29][30][31] have been found to be sufficient to exhibit catalytic performance in the development of photocatalysts. With this reasoning, we have selected Raney nickel as the catalyst carrier for our studies.…”
Section: Introductionmentioning
confidence: 99%
“…[18,27] This is a slow process ranging from hours to days. In addition, catalyst layers of 1 to 2 nm of thickness [29][30][31] have been found to be sufficient to exhibit catalytic performance in the development of photocatalysts. With this reasoning, we have selected Raney nickel as the catalyst carrier for our studies.…”
Section: Introductionmentioning
confidence: 99%
“…7,10 In this case, the only difference between the p + nSi photoanode and the p + Si anode reference will be the difference between hole and electron transport pathways affecting the reductive forward bias, as shown in Figure 5. For anodic operation, the two are now essentially identical.…”
Section: The Pmentioning
confidence: 99%
“…[7][8][9] Recently, we have investigated the tunnel barrier to hole transport presented by an interfacial layer (IL) of SiO2 in TiO2-protected Si photoanodes. 10 The SiO2 tunnel oxide can easily dominate the device resistance due to its large bandgap and relative lack of bulk oxide traps, compared to the TiO2 corrosion protection layer. Photovoltage design principles for two types of photoanodes, those employing nSi metal-insulator-semiconductor Schottky junctions and those employing p + nSi buried junctions (detailed diagrams in supporting S1), have also recently been characterized.…”
Section: Introductionmentioning
confidence: 99%