Conductance of atomic-scale Pb contacts in an electrochemical environment

Xie, Fangqing; Hüser, Falco; Pauly, Fabian; Obermair, Christian; Schön, Gerd; Schimmel, Thomas

doi:10.1103/physrevb.82.075417

Cited by 25 publications

(35 citation statements)

References 31 publications

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“…12,13 Conductances of fractional and integer G 0 have been reported for both nonmagnetic and magnetic junctions. Of particular interest is the observation of G 0 =2 conductance, e.g., for the noble Pt, Pd, and magnetic Co single-atom chains, 8 as well as Cu and Ni nanowires, 12,14 although the controversy still exists by arguing that the contamination of H 2 may cause the G 0 =2 conductance.…”

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confidence: 98%

Conductance of single-atom magnetic junctions: A first-principles study

Xie

Huang

et al. 2012

Applied Physics Letters

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We present a first-principles investigation to show that the contact conductance of a half conductance quantum ($G_0/2$) found previously does not generally hold for single-atom magnetic junctions composed of a tip and an adatom dsorbed on a surface. The contact conductance of the Ni-Co/Co(111) junction is approximately $G_0/2$, while for the Co-Co/Co(111), Ni-Ni/Ni(111), and Ni-Ni/Ni(001) junctions the contact conductances are 0.80$G_0$, 1.55$G_0$, and 1.77$G_0$, respectively. The deviation from $G_0/2$ is mainly caused by the variation of the spin-down conductance largely determined by the minority $d$ orbitals, as the spin-up one changes little for different junctions.Comment: 4 pages, 4 figure

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confidence: 98%

Conductance of single-atom magnetic junctions: A first-principles study

Xie

Huang

et al. 2012

Applied Physics Letters

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“…As a reverse process, the circuitry can be in "on" state by reduction. Besides silver, Pb can be also made to single atom transistors by a similar method [12]. Moreover, Martin et al [13] used the elastic properties of single atom relays and substrates to control single-atom switch in which the gate voltage can be performed to regulate the switch "on-off" state between the monatomic contact condition and the tunneling regime state.…”

Section: Atom Control and Devices Designmentioning

confidence: 99%

Dendrimers as Dopant Atom Carriers

Wu¹,

Dan²

2018

Dendrimers - Fundamentals and Applications

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Properties of modern semiconducting transistors and future electron or quantum devices are essentially determined by single dopant atoms. How to precisely control the individual dopant position is one of the key factors to advance these technologies. In this chapter, we first briefly introduce the research progress in single dopant devices. To fabricate single dopant devices at large scale, we then overview our previous propose to control the locations of single dopants by self-assembly of large molecules (polyglycerols) with each carrying one dopant atom. The synthesis process, doping properties, and challenges of the molecular doping technique will be thoroughly elaborated before we conclude this chapter.

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“…Nanocontacts in some papers, including [4], were formed by the controlled chemical etching of a metal srtip in an electrolytic solution.…”

Section: Introductionmentioning

confidence: 99%