Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements

Couso, C.; Iglesias, V.; Porti, M.; Claramunt, S.; Nafría, M.; Domingo, Neus; Cordes, Aaron; Bersuker, G.

doi:10.1109/led.2016.2537051

Cited by 10 publications

(3 citation statements)

References 24 publications

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“…[21] The leakage current is governed by the emission of electrons via trap state into a continuum of states associated with the presence of conductive dislocations. [22] The forward I-V curves have been analyzed in terms of various conduction mechanisms to find that the data can be fitted best to the Frenkel-Poole mechanism. [19] The current density associated with the Frenkel-Poole mechanism is given by [23]…”

Section: Resultsmentioning

confidence: 99%

Surface termination effects on the electrical characteristics of La₂O₃/Al₂O₃ nanolaminates deposited by atomic layer deposition*

Fan¹,

Ling²,

Liu³

et al. 2020

Chinese Phys. B

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Effects of initial surface termination on electrical characteristics of La2O3/Al2O3 nanolaminates deposited by atomic layer deposition are studied by conductive atomic force microscopy working in contact mode and standard electrical characterization methods. It is found that, compared with La2O3/Al2O3 nanolaminates with LaO x as termination, lower interface trap density, less current leakage spots, and higher breakdown voltage are obtained in the La2O3/Al2O3 nanolaminates with AlO x as termination after annealing. A clear promotion of interface silicate layer is observed for La2O3/Al2O3 nanolaminates with AlO x as termination compared with LaO x as termination under the same annealing condition. In addition, the current conduction mechanism in La2O3/Al2O3 nanolaminates is considered as the Poole–Frenkel conduction. All results indicate that the AlO x is a more appropriate termination to deposit La2O3/Al2O3 nanolaminates on Si substrate, which is useful for the high-κ process development.

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Section: Resultsmentioning

confidence: 99%

Surface termination effects on the electrical characteristics of La₂O₃/Al₂O₃ nanolaminates deposited by atomic layer deposition*

Fan¹,

Ling²,

Liu³

et al. 2020

Chinese Phys. B

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show abstract

“…We analyze the forward I-V curves in terms of various conduction mechanisms to find that the data can be fitted best to the Frenkel-Poole (FP) mechanism. [20] The Frenkel-Poole mechanism refers to a conduction mediated by carrier-trap states, which gives the J-E relation as follows: [21]…”

Section: Resultsmentioning

confidence: 99%

Improvement of the high- κ /Ge interface thermal stability using an in-situ ozone treatment characterized by conductive atomic force microscopy

Fan¹,

Cheng²,

Liu

et al. 2017

Chinese Phys. B

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In this work, an in-situ ozone treatment is carried out to improve the interface thermal stability of HfO 2 /Al 2 O 3 gate stack on germanium (Ge) substrate. The micrometer scale level of HfO 2 /Al 2 O 3 gate stack on Ge is studied using conductive atomic force microscopy (AFM) with a conductive tip. The initial results indicate that comparing with a non insitu ozone treated sample, the interface thermal stability of the sample with an in-situ ozone treatment can be substantially improved after annealing. As a result, void-free surface, low conductive spots, low leakage current density, and relative high breakdown voltage high-κ/Ge are obtained. A detailed analysis is performed to confirm the origins of the changes. All results indicate that in-situ ozone treatment is a promising method to improve the interface properties of Ge-based three-dimensional (3D) devices in future technology nodes.

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“…Electrical conduction along dislocation lines in semiconductors is quite an old subject. Probably its first experimental observation was in 1953 [42] and it is still nowadays the subject of intense research [43]. One possible mechanism for dislocation-conduction is the Poole-Frenkel effect [44], but, whatever the mechanism responsible for the electrical conduction, the spins of the charge carriers will be polarized, as seen above.…”

mentioning

confidence: 99%

Using torsion to manipulate spin currents

Fumeron¹,

Berche²,

Medina³

et al. 2017

EPL

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We address the problem of quantum particles moving on a manifold characterised by the presence of torsion along a preferential axis. In fact, such a torsion may be taylored by the presence of a single screw dislocation, whose Burgers vector measures the torsion amplitude. The problem, first treated in the relativistic limit describing fermions that couple minimally to torsion, is then analysed in the Pauli limit. We show that torsion induces a geometric potential and also that it couples generically to the phase of the wave function, giving rise to the possibility of using torsion to manipulate spin currents in the case of spinor wave functions. These results emerge as an alternative strategy for using screw dislocations in the design of spintronic-based devices.

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Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements

Cited by 10 publications

References 24 publications

Surface termination effects on the electrical characteristics of La₂O₃/Al₂O₃ nanolaminates deposited by atomic layer deposition*

Surface termination effects on the electrical characteristics of La₂O₃/Al₂O₃ nanolaminates deposited by atomic layer deposition*

Improvement of the high- κ /Ge interface thermal stability using an in-situ ozone treatment characterized by conductive atomic force microscopy

Using torsion to manipulate spin currents

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Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements

Cited by 10 publications

References 24 publications

Surface termination effects on the electrical characteristics of La2O3/Al2O3 nanolaminates deposited by atomic layer deposition*

Surface termination effects on the electrical characteristics of La2O3/Al2O3 nanolaminates deposited by atomic layer deposition*

Improvement of the high- κ /Ge interface thermal stability using an in-situ ozone treatment characterized by conductive atomic force microscopy

Using torsion to manipulate spin currents

Contact Info

Product

Resources

About

Surface termination effects on the electrical characteristics of La₂O₃/Al₂O₃ nanolaminates deposited by atomic layer deposition*

Surface termination effects on the electrical characteristics of La₂O₃/Al₂O₃ nanolaminates deposited by atomic layer deposition*