Conductance Statistics from a Large Array of Sub-10 nm Molecular Junctions

Abstract

Devices made of few molecules constitute the miniaturization limit that both inorganic and organic-based electronics aspire to reach. However, integration of millions of molecular junctions with less than 100 molecules each has been a long technological challenge requiring well controlled nanometric electrodes. Here we report molecular junctions fabricated on a large array of sub-10 nm single crystal Au nanodots electrodes, a new approach that allows us to measure the conductance of up to a million of junctions in a single conducting atomic force microscope (C-AFM) image. We observe two peaks of conductance for alkylthiol molecules. Tunneling decay constant (β) for alkanethiols, is in the same range as previous studies. Energy position of molecular orbitals, obtained by transient voltage spectroscopy, varies from peak to peak, in correlation with conductance values.

Barrier height distribution and dipolar relaxation in metal-insulator-semiconductor junctions with molecular insulator: Ageing effects

“…19,[35][36][37] Figure 3 (inset) shows the distribution of conductance, G ¼ dJ/dV, values measured in reverse bias (0 V) and forward bias (þ1 V) regimes, for fresh C 12 junctions prepared in nominally identical conditions. The average values and typical distribution over one decade found for G (rev.)…”

“…49 As a consequence, a large dispersion in electrical properties of the corresponding devices is expected and has been observed. 19,[35][36][37] In the particular case of macroscopic a)…”

Effect of high current density on the admittance response of interface states in ultrathin MIS tunnel junctions

“…[10][11][12][13][14][15] However, besides the problem of engineering a homogeneous and reliable top electrode in contact with a nanometer-thick molecular monolayer, a major issue in hybrid molecular-silicon junctions is the structural disorder which results from the irreversible grafting mechanism related to the strong covalent bonding ; hence structural disorder probably induces some distribution of barrier heights for electrical transport and may explain the wide range of conductance values observed experimentally. 16,17 In metal / semiconductor (SC) junctions, the presence of interface states and of a thin insulating layer have been recognized as non idealizing factors in the current-voltage (I-V) characteristics. [18][19][20][21] A number of methods based on non-stationary measurements have been developed for interface defect characterization in thick MIS diodes 22,23 and tentatively extended to MIS junctions with interfacial layers, 24,25 ultrathin SiO 2 , 19,26-29 and molecular insulator.…”

Adsorption mechanisms of l-Glutathione on Au and controlled nano-patterning through Dip Pen Nanolithography

“…Micro-and nano-scale patterning of biomolecules onto solid-state surfaces in a controlled manner has proven its applicability in several fields of science and technology, the most important being nanoelectronics [1], information storage devices [2], catalysis [3], and sensing [4]. Architectures at small scale can be fabricated using various techniques such as optical, imprint, scanning probe, or soft lithographies [5].…”