Conducted noise of GaN Schottky barrier diode in a DC–DC converter

Abstract

Wide-bandgap power devices such as those made from silicon carbide (SiC) and gallium nitride (GaN) offer superior electrical performance over conventional silicon (Si) devices for high-voltage applications. Their fast switching operation and low switching losses help increase the efficiency of power conversion circuit. This study focuses on the switching characteristics of a GaN Schottky barrier diode (SBD) and investigates the conducted noise characteristics in a DC-DC boost converter by comparing a Si PiN diode and a SiC SBD.

-GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter

“…DC-DC boost converter can be applied to enhance the output voltage for functional circuits and utilized in fields of power transformation, such as home electronics, industrial control and new energy [30][31][32][33][34]. A converter circuit usually contains SBD and MOSFET, and the whole power efficiency relies on the static and dynamic performance of these devices [35][36][37]. Acceptable off-state and reverse recovery characteristics of SBD guarantee stable output waveforms and less overall power loss [38], meanwhile, a WBG (SiC, GaN and Ga2O3) SBD has better reverse recovery characteristics due to its unipolar device structure compared to a Si device [39].…”