Conduction band offsets in ordered-GaInP/GaAs heterostructures studied by ballistic-electron-emission microscopy

O'Shea, J.; Reaves, C. M.; DenBaars, Steven P.; Chin, M. A.; Narayanamurti, V.

doi:10.1063/1.116826

Cited by 46 publications

(13 citation statements)

References 7 publications

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“…9,10,11,12,13,14,15,16,17,18 Varying degrees of ordering in different samples could be one reason leading to these discrepancies of CB offset values, 19 with InGaP films grown by metal-organic chemical vapor deposition exhibiting more ordering than films grown by gas-source molecular beam epitaxy. 20,21 In addition, the heterointerface may also be InGaAs-like or GaP-like, thus providing another possible source of variation in band offset results.…”

Section: Introductionmentioning

confidence: 99%

Band offsets of InGaP∕GaAs heterojunctions by scanning tunneling spectroscopy

Yang

Feenstra

Semtsiv

et al. 2008

Journal of Applied Physics

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Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions with InGaAs-like interfaces. Band offsets are probed using conductance spectra, with tip-induced band bending accounted for using 3-dimensional electrostatic potential simulations together with a planar computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP band gap of 1.90 eV, appropriate to the disordered InGaP alloy, a valence band offset of eV 01 . 0 38 . 0 ± is deduced along with the corresponding conduction band offset of eV 01 . 0 10 . 0 ± (type I band alignment).Published in J. Appl. Phys. 103, 073704 (2008).2

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Section: Introductionmentioning

confidence: 99%

Band offsets of InGaP∕GaAs heterojunctions by scanning tunneling spectroscopy

Yang

Feenstra

Semtsiv

et al. 2008

Journal of Applied Physics

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“…As the bandgap difference between the two edges of the emitter-base space charge region is only 12 meV, it is clear that we are dealing with a gradual junction and not an abrupt one, as it has often been considered. Furthermore, in this gradual junction, the energy band gap of the emitter by the junction place is far from being that of the GaInP alloy lattice matched to GaAs [2,7]. Actually, our measurements show that it is close to the GaAs band gap, whereby the injection of holes into the emitter occurs, strongly reducing the transistor current gain and producing some other deleterious effects.…”

Section: Current Gainmentioning

confidence: 76%

“…, where E g (0) is the respective energy bandgap at 0K and α and β are constants [6], E gGaAs (0) = 1.502 eV and E gGaInP (0) ~ 1.9 eV [2,6,7].…”

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confidence: 99%

On the energy band structure of the GaInP/GaAs heterojunction bipolar transistor

Mimila-Arroyo

2007

Phys. Status Solidi (c)

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The GaInP/GaAs heterojunction bipolar transistor energy band gap close to the junction is determined through the behavior of its collector and base currents and current gain as a function of the temperature. It results that the emitter-base junction is a gradual one with the emitter bandgap, at the place where the carrier injection takes place, being wider than that of the GaAs by just ~13 meV. It is also shown that for T > 200 K the diffusion contribution to the base current is due to injected holes into the emitter, imposing a strong limitation on the device current gain. Besides, such bandgap difference between the emitter and the base makes the device current gain to decrease as the temperature increases. In view of these results technological modifications are discussed to improve the transistor performance. . Their superior performances stem from an emitter forbidden bandgap larger than that of the base, introducing additional degrees of freedom in the design of the device. In the case of an abrupt heterojunction, such bandgap difference is partitioned between the conduction and the valence bands producing energy band discontinuities, introducing different barriers heights for the injection of carriers into the other material. The HBT's take advantage of this unequal minority carrier injection rate through the heterojunction, to achieve a higher emitter efficiency than in a homojunction transistor bearing the same majority carriers concentration at each side of the junction. The GaInP alloy matched to the GaAs lattice has a forbidden energy gap wider than that of GaAs by ~430 meV. Most of this bandgap difference appears in the valence band with ∆E v = 240-300 meV and the respective discontinuity in the conduction band, ∆E c being much smaller. Such heterojunction bands condition reduces, in principle, in an important way the injection of holes from the GaAs into the GaInP, leaving almost unchanged the ability to inject electrons from the GaInP into the GaAs [2-5]. These unequal injection rates are well adapted for getting an Npn: n-GaInP/p-GaAs, heterojunction bipolar transistor in which the n-GaInP as emitter should severely confine the base holes. Although most of these promises are now confirmed, there is still a poor understanding of the HBT currents origin and mechanisms, complicating the transistor optimization. In this work we report on the emitter-base heterojunction energy bands diagram at the place where the minority carriers are injected at each side of the heterojunction. We have probed the energy band gap at those places of the heterostructure by measuring the collector and base currents as well as the current gain as a function of the emitter-base junction temperature.

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“…2,6,7 Then, in the case of a nondegenerated materials homojunction, both band gap material are the same. However, in the case of an abrupt heterojunction the band gaps should have different values corresponding to each of the two different materials constituting the heterojunction and, in the case of a gradual junction, the band gaps should be slightly different, depending on the composition gradient occurring through the emitter-base space charge region.…”

mentioning

confidence: 98%