Conduction mechanisms and enhanced multiferroic properties of 2-2 type Bi0.89Sm0.11FeO3–NiFe2O4 composition thin films

Resistive Switching and the Local Electric Field in Bi0.85-xPr0.15RExFe0.97Mn0.03O3/CuFe2O4 (RE = Sr, Dy) Bilayered Thin Films

“…That means the structure of the doped thin films does not change, but only the structure distortion appears. This distortion can influence the ferroelectric properties and ferromagnetic properties …”

“…This distortion can influence the ferroelectric properties and ferromagnetic properties. 38 Figure 2(a) shows the frequency dependent dielectric constants of Bi 0.85x Pr 0.15 RE x Fe 0.97 Mn 0.03 O 3 /CuFe 2 O 4 (BPRE x FMO/CuFO, RE = Sr, Dy) thin films. The dielectric dispersion is exhibited by all the samples with the frequency below 100 kHz, and the constants of the doped thin films are obviously lower than that of BFO/CuFO at this frequency region.…”

Ferrites Obtained by Sol–Gel Method

“…The measured leakage current density of the BFO, BFO-NFO, and BSFO-NFO thin films at 150 kV/cm is 1.25 Â 10-3 , 1.41 Â 10-4 , and 4.55 Â 10-6 A/cm 2 , respectively. Moreover, the breakdown electric field of the BiFeO 3 -NiFe 2 O 4 thin film is 280 kV/cm and is higher as compared to pure BFO thin film (160 kV/cm) (Liu et al 2015).…”

“…Pure BiFeO 3 , BiFeO 3 -NiFe 2 O 4 , and Sm-doped Bi 0.89 Sm 0.11 FeO 3 -NiFe 2 O 4 thin films deposited on FTO/glass (SnO 2 :F) substrates via a sol-gel method modify the leakage current characteristics and ferroelectric and ferromagnetic properties of the BiFeO 3 -NiFe 2 O 4 thin films (Liu et al 2015). The NiFe 2 O 4 precursor solution was deposited by spin coating onto the ultrasonically washed FTO/glass substrate.…”