Resistive Switching and the Local Electric Field in Bi_0.85-xPr_0.15RE_xFe_0.97Mn_0.03O₃/CuFe₂O₄ (RE = Sr, Dy) Bilayered Thin Films

Abstract

Bilayer BiPrREFeMnO/CuFeO (BPREFMO/CuFO, RE = Sr, Dy) thin films were prepared on FTO/glass substrates by the chemical solution deposition method. The structure transition does not appear after ion doping, which is confirmed by XRD and its refined results. The samples remain in the trigonal R3c:H structure in the BFO phase and in the tetragonal I41/amd structure in the CuFO phase. The asymmetric character of leakage current density curves and resistive switching effects have been explored. And the ion substitution impacts on the resistive switching effects may be due to the existence of local fields. Under the applied electric field, carries are accumulated and arranged directionally at the interface between the BFO and CuFO layers to form the local electric field. Such local field is affected by ion dopants, and the field compensates or weakens the applied electrical field. The reinforced or weakened resistive behavior is dependent on the direction of the local field and the injection of electrons. The polarization switching currents of the BPFMO/CuFO, BPSFMO/CuFO, and BPDFMO/CuFO samples, whose distribution fields are proportional to the local electrical fields, are 0.0070, 0.0049, and 0.0074 A under the positive applied field, respectively. And the remanent polarization is increased to 74.4, 73.5, and 84.3 μC/cm of the doped samples, respectively.

Annealing atmosphere effect on the resistive switching and magnetic properties of spinel Co3O4 thin films prepared by a sol–gel technique

“…Intensive efforts have been devoted to overcome aforementioned challenges of RS parameters and to nd out actual physical mechanism. For this purpose, many approaches, such as metal doping, [14][15][16][17] embedding metal nanoparticles, 18,19 bilayer structure, [20][21][22] as well as annealing atmosphere treatment, [23][24][25][26] have been adopted to minimize the challenges. Among them, annealing atmosphere treatment is not only good compatibility with CMOS process, but also a feasible and effective way to improve the performance and reliability of RRAM devices.…”

Structure-led manifestation of photocatalytic activity in magnetically recoverable spinel CuFe2O4 nanoparticles and its application in degradation of industrial effluent dyes under solar light

“…Specifically, the spinel copper ferrite, CuFe 2 O 4 is considered an economically viable and earth abundant alternative to many other photocatalysts with good photo-electrochemical stability. CuFe 2 O 4 nanoparticles (CFNPs) and their thin films with excellent magnetic properties are reported to be useful in wastewater treatment and switching devices [3,4]. The material exhibits high chemical stability, a low direct bandgap of around 1.9 eV, and demonstrated p-type behavior making it an ideal candidate as a photo-redox agent.…”

Nanostructure‐enhanced magnetoelectric/magnetostrictive properties and reduced losses in self‐assembled epitaxial CuFe2O4–BiFeO3 layers on Pb(Mg1/3Nb2/3)O3–33at%PbTiO3 crystals

“…Although some bulk magnetostrictive materials such as CoFe 2 O 4 have large magnetostriction (λ m ), they also have relatively high losses. 15 Previous studies to have attempted to achieve both high Q and high λ m in epitaxial thin films, 16,17 but, it has proven difficult to achieve both conditions simultaneously. 16 Although, Howe et al 18 have recently reported an optimum tradeoff between high Q and λ m for NiZnAl-ferrite.…”