Conduction mechanisms in memristors based on nanotubular arrays of zirconium oxide

Quantum conductors formation and resistive switching memory effects in zirconia nanotubes

“…In the process, lower values of r are recorded. It should be noted that Schottky barriers are possible to emerge in the region of interfaces in ZrO 2 -based MDM structures [34,39]. In the process, the values of the indicated potential barriers, as well as the features of the Schottky emission in highly resistive states are governed by the materials of the contacts and the defectiveness of the active layer of memristors [17,23,25].…”

“…It is known that the resistive switching in the oxide layer of MDM structures underlying the memory device operation is usually provided by the mobility of anionic (V O ) vacancies [21,25,27,[29][30][31][33][34][35], ions of impurity metals [19-21, 25, 26, 28, 35-37] or Zr + [17,30,38] in the active layer under an external electric field. The electrical resistance of the memristor in low-resistance (LRS), high-resistance (HRS) and intermediate states are governed by the thickness and imperfection of the dioxide layer [24,26,30,33,34,39]. In this case, one of the most probable mechanisms of resistive switching in as-grown ZrO 2 -based structures is the chainordering of V O vacancies followed by the formation of conductive channels or filaments between metal contacts.…”

“…To date, the effects of resistive switching in 40 nm thick ZrO 2 layers produced by the anodic oxidation at room temperature in the galvanostatic mode in an aqueous solution of phosphoric acid have been examined in [22,54]. The current-voltage (I-V ) characteristics of nanotubular ZrO 2 layer-based as-grown MDM structures with unidirectional conductivity, obtained by the anodic oxidation method in the potentiostatic mode, have been reported in [34,39]. The present paper is aimed at measuring and analyzing the static I-V characteristics of nanoelectronic devices based on a ZrO 2 nanotubular layer in unipolar and bipolar resistive switching modes, and also at describing the peculiarities of switching mechanisms in fabricated memristors.…”

From fundamentals to frontiers: a review of memristor mechanisms, modeling and emerging applications

“…A. Petrenyov et al demonstrated a memristor based on nanotubular arrays of zirconium oxide where P–F emission is the dominant conduction mechanism. 64 All types of materials used as dielectric layers for memristors often contain many defects and impurities that can act as traps and contribute to current conduction in different ways. In such disordered materials, one commonly encountered mechanism is hopping conduction.…”

Energy Gap Evaluation in Microcrystalline m-HfO2 Powder

“…Hafnium dioxide meets great interest of modern condensed matter physics as a wide-gap high-k material with superior thermal and chemical stability. Along with the other IVB metal oxides (ZrO 2 , TiO 2 ) HfO 2 is considered to be a promising solid-state medium for creation of the non-volatile memory cells because of its physical properties and favorable valence and conduction band alignments [1][2][3][4][5]. Due to wide energy gap and high refractive index hafnia is used as optical coatings [6].…”