Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion

Abstract

In this work, the transparent bipolar resistive switching characteristics of a SiCN-based ITO/SiCN/AZO structure due to In diffusion from ITO is studied. The SiCN based device is found to be 80% transparent in the visible wavelength region. This device, with AZO as both top and bottom electrodes, does not show any RRAM property due to deposition of the high quality O-free SiCN film. Replacing the AZO top electrode with ITO in this device results in good resistive switching (RS) characteristics with a high on/off ratio and long retention. Replacing the SiCN film with ZrO also results in excellent RS characteristics due to the formation of an oxygen vacancies filament inside the ZrO film. A resistance ratio of on/off is found to be higher in the SiCN based device compared to that of the ZrO device. Diffusion of In from ITO into the SiCN film on application of high positive voltage during forming can be attributed to the occurrence of RS in the device, which is confirmed by the analyses of energy dispersive spectroscopy and secondary-ion mass spectrometry. This study shows a pathway for the fabrication of CBRAM based transparent devices for non-volatile memory application.

Oxygen Vacancy Transition in HfOx‐Based Flexible, Robust, and Synaptic Bi‐Layer Memristor for Neuromorphic and Wearable Applications

“…[ 21,22 ] The randomly grown filaments in switching layers hinder MLC capability of device. Therefore, different interfacial engineering techniques such as doping of impurity, [ 23–25 ] multiple temperature annealing and insertion of barrier layer or modulation layer were applied to confine the filament area in order to achieve stable MLC capability. [ 26–28 ] Moreover, mostly memristors tend to degrade their storage capabilities under humid and varying temperature environment.…”

Highly Efficient Invisible TaOx/ZTO Bilayer Memristor for Neuromorphic Computing and Image Sensing

“…Recently, the transparent electronic device has become the most modern topic for artificial synaptic systems. Transition-metal oxides and -metal nitrides such as Eu 2 O 3 , Al 2 O 3 , TaO x , HfO 2 , ZTO, NiO, WO x , ZrN, and SiCN have been studied by researchers in the past decade due to their good memristive capabilities. − Mostly, memristors with digital switching were studied for their highly stable data retention and good switching speed. However, analog switching is desirable with electrical pulses to mimic synaptic functions for neuromorphic computing.…”

Studies on Oxygen Permeation Resistance of SiCN Thin Film and RRAM Applications

“…In RRAM using ZnO, oxygen ions were involved in forming conductive filaments in ZnO combined with the top electrode during the set/reset operation, and the endurance property was degraded [ 5 , 23 , 24 ]. In order to prevent this degradation, a SiCN thin film (4MS PPR of 5%) was suggested for the first time to block the oxygen ions from combining with the top electrode and served as temporary oxygen storage between the top electrode and ZnO [ 12 , 13 , 14 , 15 ].…”

“…To improve the RRAM reliability, SiCN is suggested as an oxygen reservoir between the metal electrode and resistance-switching layer for the first time. SiCN thin film has been reported as a resistance-switching layer of RRAM [ 12 , 13 , 14 , 15 ]. SiCN as an oxygen reservoir, however, has not been researched yet.…”